生命周期: | Obsolete | Reach Compliance Code: | compliant |
风险等级: | 5.84 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.065 A | 最小直流电流增益 (hFE): | 70 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.2 W | 子类别: | Other Transistors |
表面贴装: | YES | 标称过渡频率 (fT): | 4500 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA812TGB | NEC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-363 |
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UPA812T-GB | NEC |
获取价格 |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-6 |
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UPA812T-GB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Sil |
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UPA812TGB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Sil |
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UPA812TGB-T1 | NEC |
获取价格 |
TRANSISTOR | BJT | PAIR | NPN | 10V V(BR)CEO | 65MA I(C) | SOT-363 |
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UPA812T-T1 | NEC |
获取价格 |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4 |
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UPA812T-T1-A | CEL |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
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UPA812T-T1FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Sil |
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UPA812T-T1FB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Sil |
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UPA812T-T1GB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Sil |
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