是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8532.22.00 |
风险等级: | 1.41 | 电容: | 680 µF |
电容器类型: | ALUMINUM ELECTROLYTIC CAPACITOR | 直径: | 10 mm |
介电材料: | ALUMINUM | JESD-609代码: | e3 |
长度: | 25 mm | 负容差: | 20% |
端子数量: | 2 | 最高工作温度: | 105 °C |
最低工作温度: | -55 °C | 封装形式: | Radial |
包装方法: | Tape | 极性: | POLARIZED |
正容差: | 20% | 额定(直流)电压(URdc): | 35 V |
纹波电流: | 1680 mA | 端子面层: | Tin (Sn) |
端子节距: | 5 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA1V682MPD | NICHICON |
获取价格 |
ALUMINUM ELECTROLYTIC CAPACITORS | |
UPA1V821MHD | NICHICON |
获取价格 |
Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 35V, 20% +Tol, 20% -Tol, 820uF | |
UPA1V821MPD | NICHICON |
获取价格 |
ALUMINUM ELECTROLYTIC CAPACITORS | |
UPA1V822MPD | NICHICON |
获取价格 |
ALUMINUM ELECTROLYTIC CAPACITORS | |
UPA2001 | ETC |
获取价格 |
UPA2001C.2002C.2003C.2004C Data Sheet | Data Sheet[08/1981] | |
UPA2001C | NEC |
获取价格 |
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR ARRAY | |
UPA2001C-A | RENESAS |
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500mA, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, DIP-16 | |
UPA2002 | ETC |
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UPA2001C.2002C.2003C.2004C Data Sheet | Data Sheet[08/1981] | |
UPA2002C | NEC |
获取价格 |
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR ARRAY | |
UPA2002C-A | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 7-Element, NPN, Silicon, PLASTIC, DIP-16 |