Datasheet > UPA1980

UPA1980

更新时间： 2024-09-12 12:47:15

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管场效应晶体管开关
页数	文件大小	规格书
8页	81K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

获取价格

数据手册

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UPA1980 数据手册

DATA SHEET

MOS FET WITH SCHOTTKY BARRIER DIODE

µ PA1980

P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE

FOR SWITCHING

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The µ PA1980 is a switching device, which can be driven

directly by a 1.8 V power source.

+0.1

–0.05

+0.1

–0.06

0.32

0.16

This device incorporates a MOS FET, which features a low

on-state resistance and excellent switching characteristics,

and a low leakage Schottky barrier diode, and is suitable for

applications such as DC/DC converter of portable machine

and so on.

0 to 0.1

FEATURES

• 1.8 V drive available (MOS FET)

0.65

0.95 0.95

1.9

• Low on-state resistance (MOS FET)

R^DS(on)1= 135 mΩ MAX. (V^GS= −4.5 V, I^D= −1.0 A)

R^DS(on)2= 183 mΩ MAX. (V^GS= −2.5 V, I^D= −1.0 A)

R^DS(on)3= 284 mΩ MAX. (V^GS= −1.8 V, I^D= −0.5 A)

• Low reverse current (Schottky barrier diode)

I^R= 20 µA MAX. (V^R= 40 V)

0.9 to 1.1

2.9 ±0.2

1: Anode

2: Source

3: Gate

: Drain

5: N/C

6: Cathode

PIN CONNECTION (Top View)

6 5 4

ORDERING INFORMATION

PART NUMBER

PACKAGE

µ PA1980TE

SC-95 (Mini Mold Thin Type)

Marking: TW

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with

caution for electrostatic discharge.

V^ESD± 100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G16550EJ1V0DS00 (1st edition)

Date Published February 2003 NS CP(K)

Printed in Japan

2003

12 3 4 5 6 7 8

中文翻译

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与UPA1980相关器件

型号	品牌	获取价格	描述	数据表
UPA1980TE	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1980TE	RENESAS	获取价格	2000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIMOLD, SC-95, 6 PIN
UPA1980TE-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2A I(D),TSOP
UPA1980TE-T1	RENESAS	获取价格	UPA1980TE-T1
UPA1980TE-T1-AT	RENESAS	获取价格	Pch Single Power Mosfet -20V -2A 135Mohm 6Pin Tmm/Sc-95, TMM, /Embossed Tape
UPA1980TE-T2	RENESAS	获取价格	UPA1980TE-T2
UPA1980TE-T2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2A I(D),TSOP
UPA1980TE-T2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2A I(D),TSOP
UPA1981	NEC	获取价格	N-CHANNEL/P-CHANNEL MOS FET PAIR FOR LOAD SWITCH
UPA1981TE	RENESAS	获取价格	2800mA, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIMOLD, SC-95, 3 PIN