Datasheet > UPA1980TE

UPA1980TE

更新时间： 2024-09-12 12:47:15

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管场效应晶体管开关
页数	文件大小	规格书
8页	81K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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技术参数
数据手册

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UPA1980TE 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	MINIMOLD, SC-95, 6 PIN	Reach Compliance Code：	compliant
风险等级：	5.92	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏极电流 (ID)：	2 A
最大漏源导通电阻：	0.183 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G6	JESD-609代码：	e0
元件数量：	1	端子数量：	6
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	P-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

UPA1980TE 数据手册

DATA SHEET

MOS FET WITH SCHOTTKY BARRIER DIODE

µ PA1980

P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE

FOR SWITCHING

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The µ PA1980 is a switching device, which can be driven

directly by a 1.8 V power source.

+0.1

–0.05

+0.1

–0.06

0.32

0.16

This device incorporates a MOS FET, which features a low

on-state resistance and excellent switching characteristics,

and a low leakage Schottky barrier diode, and is suitable for

applications such as DC/DC converter of portable machine

and so on.

0 to 0.1

FEATURES

• 1.8 V drive available (MOS FET)

0.65

0.95 0.95

1.9

• Low on-state resistance (MOS FET)

R^DS(on)1= 135 mΩ MAX. (V^GS= −4.5 V, I^D= −1.0 A)

R^DS(on)2= 183 mΩ MAX. (V^GS= −2.5 V, I^D= −1.0 A)

R^DS(on)3= 284 mΩ MAX. (V^GS= −1.8 V, I^D= −0.5 A)

• Low reverse current (Schottky barrier diode)

I^R= 20 µA MAX. (V^R= 40 V)

0.9 to 1.1

2.9 ±0.2

1: Anode

2: Source

3: Gate

: Drain

5: N/C

6: Cathode

PIN CONNECTION (Top View)

6 5 4

ORDERING INFORMATION

PART NUMBER

PACKAGE

µ PA1980TE

SC-95 (Mini Mold Thin Type)

Marking: TW

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with

caution for electrostatic discharge.

V^ESD± 100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G16550EJ1V0DS00 (1st edition)

Date Published February 2003 NS CP(K)

Printed in Japan

2003

12 3 4 5 6 7 8

中文翻译

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与UPA1980TE相关器件

型号	品牌	获取价格	描述	数据表
UPA1980TE-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2A I(D),TSOP
UPA1980TE-T1	RENESAS	获取价格	UPA1980TE-T1
UPA1980TE-T1-AT	RENESAS	获取价格	Pch Single Power Mosfet -20V -2A 135Mohm 6Pin Tmm/Sc-95, TMM, /Embossed Tape
UPA1980TE-T2	RENESAS	获取价格	UPA1980TE-T2
UPA1980TE-T2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2A I(D),TSOP
UPA1980TE-T2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2A I(D),TSOP
UPA1981	NEC	获取价格	N-CHANNEL/P-CHANNEL MOS FET PAIR FOR LOAD SWITCH
UPA1981TE	RENESAS	获取价格	2800mA, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIMOLD, SC-95, 3 PIN
UPA1981TE	NEC	获取价格	N-CHANNEL/P-CHANNEL MOS FET PAIR FOR LOAD SWITCH
UPA1981TE-AT	NEC	获取价格	TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,2.8A I(D),TSOP

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