Datasheet > UPA1981TE-AT

UPA1981TE-AT

更新时间： 2024-09-13 04:23:43

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
4页	95K
描述
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,2.8A I(D),TSOP

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中文翻译

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UPA1981TE-AT 数据手册

DATA SHEET

INTEGRATED LOAD SWITCH

µ PA1981

N-CHANNEL/P-CHANNEL MOS FET PAIR

FOR LOAD SWITCH

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

+0.1

–0.06

0.32

–0.05

0.16

The µ PA1981 is a N-Channel/P-Channel MOS FET pair for compact

power management in portable electronic equipment where 2.5 to 8 V

input and 2.8 A output current capability are needed.

This load switch integrated a small N-Channel MOS FET (Q1), which

drives a large P-Channel MOS FET (Q2) in one tiny package (SC-95).

0 to 0.1

0.65

FEATURES

0.95 0.95

1.9

• VS2D21 = 0.2 V MAX. (VS2S1 = 5.0 V, ID2 = −2.8 A, RD2S2(on)1 = 70 mΩ)

0.9 to 1.1

2.9 ±0.2

• VS2D22 = 0.2 V MAX. (VS2S1 = 2.5 V, ID2 = −1.9 A, RD2S2(on)2 = 105 mΩ)

ORDERING INFORMATION

PART NUMBER

PACKAGE

µ PA1981TE

SC-95 (Mini Mold Thin Type)

Marking: TZ

PIN CONNECTION (Top View)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Source2 to Source1 Input Voltage Range

Gate1 to Source1 On Voltage Range

Drain2 Current (DC) ^Note1

VS2S1

V^G1S1

I^D2(DC)

I^D2(pulse)

2.5 to 8.0

1.5 to 7.0

−2.8

−10.0

1.0

1. S1(Q1)

2. D2(Q2)

3. D2(Q2)

4. S2(Q2)

Drain2 Current (pulse) ^Note2

Total Power Dissipation ^Note1

Channel Temperature

5. G1(Q1)

6. G2/D1

°C

T^ch

T^stg

150

−55 to +150

Storage Temperature

Notes 1. Mounted on FR-4 Board of 2500 mm²x 1.6 mm, t ≤ 5 sec

2. PW ≤ 10 µs, Duty Cycle ≤ 1%

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G17263EJ1V0DS00 (1st edition)

Date Published July 2004 NS CP(K)

Printed in Japan

2004

12 3 4

中文翻译

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与UPA1981TE-AT相关器件

型号	品牌	获取价格	描述	数据表
UPA1981TE-T1	NEC	获取价格	Small Signal Field-Effect Transistor, 2.8A I(D), 2-Element, N-Channel and P-Channel, Silic
UPA1981TE-T1	RENESAS	获取价格	2800mA, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIMOLD, SC-95, 3 PIN
UPA1981TE-T1-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2.8A I(D), 2-Element, N-Channel and P-Channel, Silic
UPA1981TE-T1-AT	RENESAS	获取价格	Nch/Pch Dual Power Mosfet 7V 2.8A 70Mohm 6Pin Tmm/Sc-95, TMM, /Embossed Tape
UPA1981TE-T2	NEC	获取价格	Small Signal Field-Effect Transistor, 2.8A I(D), 2-Element, N-Channel and P-Channel, Silic
UPA1981TE-T2	RENESAS	获取价格	2800mA, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIMOLD, SC-95, 3 PIN
UPA1981TE-T2-A	RENESAS	获取价格	2800mA, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, MINIMOLD, SC-95, 3
UPA1981TE-T2-AT	NEC	获取价格	TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,2.8A I(D),TSOP
UPA1A102MPD	NICHICON	获取价格	ALUMINUM ELECTROLYTIC CAPACITORS
UPA1A102MPD1TD	NICHICON	获取价格	Aluminum Electrolytic Capacitor, Polarized, Aluminum, 10V, 20% +Tol, 20% -Tol, 1000uF

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