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UPA1912

更新时间： 2024-11-22 22:41:43
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管场效应晶体管开关
页数 文件大小 规格书
8页 61K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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UPA1912 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
PA1912  
µ
P-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The µPA1912 is a switching device which can be driven  
directly by a 2.5-V power source.  
+0.1  
–0.05  
+0.1  
–0.06  
0.32  
0.16  
The µPA1912 features a low on-state resistance and excellent  
switching characteristics, and is suitable for applications such  
as power switch of portable machine and so on.  
6
1
5
2
4
3
0 to 0.1  
FEATURES  
• Can be driven by a 2.5-V power source  
• Low on-state resistance  
0.65  
0.95 0.95  
1.9  
DS(on)1  
R
DS(on)2  
R
DS(on)3  
R
GS  
D
= 50 mΩ MAX. (V = –4.5 V, I = –2.5 A)  
0.9 to 1.1  
2.9 ±0.2  
GS  
D
= 52 mΩ MAX. (V = –4.0 V, I = –2.5 A)  
GS  
D
= 70 mΩ MAX. (V = –2.5 V, I = –2.5 A)  
1
, 2, 5, 6 : Drain  
3
4
: Gate  
: Source  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
6-pin Mini Mold (Thin Type)  
EQUIVALENT CIRCUIT  
µPA1912TE  
Drain  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Body  
Diode  
DSS  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Drain Current (pulse) Note1  
Total Power Dissipation  
Total Power Dissipation Note2  
Channel Temperature  
Storage Temperature  
V
V
–12  
±10  
±4.5  
±18  
0.2  
2
V
Gate  
GSS  
V
A
Gate  
Protection  
Diode  
D(DC)  
I
D(pulse)  
I
A
Source  
T1  
P
W
W
°C  
Marking: TD  
T2  
P
ch  
T
150  
stg  
T
–55 to +150 °C  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %  
2. Mounted on FR-4 board, t ≤ 5 sec.  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published July 1999 NS CP(K)  
Printed in Japan  
D13806EJ2V0DS00 (2nd edition)  
The mark ★ shows major revised points.  
1998, 1999  
©
12345678

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