Datasheet > UPA1915TE-A

UPA1915TE-A

更新时间： 2024-02-03 09:03:11

品牌	Logo	应用领域
瑞萨 - RENESAS		开关光电二极管晶体管
页数	文件大小	规格书
8页	65K
描述
4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-95, 6 PIN

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中文翻译

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技术参数
数据手册

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UPA1915TE-A 技术参数

生命周期：	Transferred	零件包装代码：	SC-95
包装说明：	SMALL OUTLINE, R-PDSO-G6	针数：	6
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.34
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	20 V
最大漏极电流 (ID)：	4.5 A	最大漏源导通电阻：	0.09 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G6
元件数量：	1	端子数量：	6
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	P-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON

UPA1915TE-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA1915

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The µPA1915 is a switching device which can be driven

directly by a 2.5-V power source.

+0.1

–0.05

+0.1

–0.06

0.32

0.16

The µPA1915 features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

0 to 0.1

FEATURES

• Can be driven by a 2.5-V power source

• Low on-state resistance

0.65

0.95 0.95

1.9

R^DS(on)1= 55 mΩ MAX. (V^GS= –4.5 V, I^D= –2.5 A)

R^DS(on)2= 58 mΩ MAX. (V^GS= –4.0 V, I^D= –2.5 A)

R^DS(on)3= 82 mΩ MAX. (V^GS= –2.7 V, I^D= –2.5 A)

R^DS(on)4= 90 mΩ MAX. (V^GS= –2.5 V, I^D= –2.5 A)

0.9 to 1.1

2.9 ±0.2

, 2, 5, 6 : Drain

: Gate

: Source

ORDERING INFORMATION

PART NUMBER

PACKAGE

EQUIVALENT CIRCUIT

µPA1915TE

SC-95 (Mini Mold Thin Type)

Drain

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Body

Diode

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse) ^Note1

Total Power Dissipation

Total Power Dissipation ^Note2

Channel Temperature

Storage Temperature

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

–20

±12

±4.5

±18

0.2

Gate

Protection

Diode

Source

°C

Marking: TH

P^T2

T^ch

150

T^stg

–55 to +150 °C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. Mounted on FR-4 Board, t ≤ 5 sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published May 2001 NS CP(K)

Printed in Japan

G14761EJ2V0DS00 (2nd edition)

The mark ★ shows major revised points.

2000

12 3 4 5 6 7 8

中文翻译

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与UPA1915TE-A相关器件

型号	品牌	获取价格	描述	数据表
UPA1916	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1916TE	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1916TE(0)-T1-AT	RENESAS	获取价格	Power MOSFETs for Automotive, TMM, /Tape
UPA1916TE-A	NEC	获取价格	暂无描述
UPA1916TE-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,4.5A I(D),TSOP
UPA1916TE-T1	RENESAS	获取价格	UPA1916TE-T1
UPA1916TE-T1-A	RENESAS	获取价格	Power MOSFETs for Automotive, TMM, /Tape
UPA1916TE-T1-AT	RENESAS	获取价格	Power MOSFETs for Automotive, TMM, /Tape
UPA1916TE-T2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,4.5A I(D),TSOP
UPA1916TE-T2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,4.5A I(D),TSOP

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