是否Rohs认证: | 符合 | 生命周期: | Not Recommended |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 3.5 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 2 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA1918TE-T2-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,3.5A I(D),TSOP | |
UPA1919 | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
UPA1919TE | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
UPA1919TE(0)-T1-A | RENESAS |
获取价格 |
Power MOSFETs for Automotive, TMM, /Tape | |
UPA1919TE-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,6A I(D),TSOP | |
UPA1919TE-T2 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,6A I(D),TSOP | |
UPA1919TE-T2-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,6A I(D),TSOP | |
UPA1919TE-T2-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,6A I(D),TSOP | |
UPA1930TE-T1-A | NEC |
获取价格 |
Power Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide | |
UPA1930TE-T2-A | NEC |
获取价格 |
Power Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide |