Datasheet > 晶体管 > 小信号场效应晶体管> UPA1919

UPA1919

更新时间： 2024-02-18 04:42:29

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管场效应晶体管开关
页数	文件大小	规格书
8页	75K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

UPA1919 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	6 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

UPA1919 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA1919

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µPA1919 is a switching device, which can be driven

directly by a 2.5 V power source.

+0.1

–0.05

+0.1

–0.06

0.32

0.16

This device features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

0 to 0.1

FEATURES

• 2.5 V drive available

• Low on-state resistance

R^DS(on)1= 58 mΩ MAX. (V^GS= −4.5 V, I^D= −3.0 A)

R^DS(on)2= 60 mΩ MAX. (V^GS= −4.0 V, I^D= −3.0 A)

R^DS(on)3= 84 mΩ MAX. (V^GS= −2.5 V, I^D= −3.0 A)

0.65

0.95 0.95

1.9

0.9 to 1.1

2.9 ±0.2

ORDERING INFORMATION

1, 2, 5, 6 : Drain

: Gate

: Source

PART NUMBER

PACKAGE

µPA1919TE

SC-95 (Mini Mold Thin Type)

Marking: TX

EQUIVALENT CIRCUIT

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

Total Power Dissipation

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

−20

m12

m6.0

Drain

Body

Diode

m24

0.2

Gate

°C

Total Power Dissipation ^Note2

P^T2

2.0

150

Gate

Protection

Diode

Channel Temperature

Tch

Source

Storage Temperature

Tstg

−55 to +150

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board of 2500 mm²x 1.6 mm, t ≤ 5 sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. G16298EJ1V0DS00 (1st edition)

Date Published September 2002 NS CP(K)

2002

Printed in Japan

12 3 4 5 6 7 8

中文翻译

下载PDF

与UPA1919相关器件

型号	品牌	获取价格	描述	数据表
UPA1919TE	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1919TE(0)-T1-A	RENESAS	获取价格	Power MOSFETs for Automotive, TMM, /Tape
UPA1919TE-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,6A I(D),TSOP
UPA1919TE-T2	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,6A I(D),TSOP
UPA1919TE-T2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,6A I(D),TSOP
UPA1919TE-T2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,6A I(D),TSOP
UPA1930TE-T1-A	NEC	获取价格	Power Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide
UPA1930TE-T2-A	NEC	获取价格	Power Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide
UPA1930TE-T2-A	RENESAS	获取价格	4.5A, 30V, P-CHANNEL, Si, POWER, MOSFET
UPA1930TE-T2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,4.5A I(D),TSOP

与UPA1919相关文章

NTE1856手册解读：产品描、产品特性
2024-07-19

10
74HCT377资料手册解读：产品特性、引脚信息、参数分析
2024-07-19

10
GSS4511手册快速解读：产品特性、参数分析
2024-07-19

10
STM32F1038资料手册解读：产品特性、引脚信息、数据参数
2024-07-19

11

产品中心

服务支持

精选活动

关于我们

帮助中心

UPA1919

UPA1919 技术参数

UPA1919 数据手册

与UPA1919相关器件

与UPA1919相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UPA1919

UPA1919 技术参数

UPA1919 数据手册

与UPA1919相关器件

与UPA1919相关文章

您还可以找

您在本页遇到什么问题？