是否Rohs认证: | 符合 | 生命周期: | Not Recommended |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.61 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 3.5 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 2 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA1918TE-T1 | RENESAS |
获取价格 |
UPA1918TE-T1 | |
UPA1918TE-T1-A | RENESAS |
获取价格 |
Power MOSFETs for Automotive, TMM, /Tape | |
UPA1918TE-T2-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,3.5A I(D),TSOP | |
UPA1918TE-T2-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,3.5A I(D),TSOP | |
UPA1919 | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
UPA1919TE | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
UPA1919TE(0)-T1-A | RENESAS |
获取价格 |
Power MOSFETs for Automotive, TMM, /Tape | |
UPA1919TE-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,6A I(D),TSOP | |
UPA1919TE-T2 | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,6A I(D),TSOP | |
UPA1919TE-T2-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,6A I(D),TSOP |