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UPA1918TE-A

更新时间： 2024-02-15 14:11:32
品牌 Logo 应用领域
瑞萨 - RENESAS 开关光电二极管晶体管
页数 文件大小 规格书
8页 71K
描述
3500mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-95, 6 PIN

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中文翻译

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UPA1918TE-A 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Not Recommended零件包装代码：SC-95
包装说明：SMALL OUTLINE, R-PDSO-G6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.16
Is Samacsys：N配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：3.5 A
最大漏极电流 (ID)：3.5 A最大漏源导通电阻：0.19 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G6
JESD-609代码：e6元件数量：1
端子数量：6工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：2 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Bismuth (Sn98Bi2)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

UPA1918TE-A 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
µPA1918  
P-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
The µPA1918 is a switching device, which can be driven  
directly by a 4.0 V power source.  
PACKAGE DRAWING (Unit: mm)  
+0.1  
–0.05  
+0.1  
–0.06  
0.32  
0.16  
This device features a low on-state resistance and excellent  
switching characteristics, and is suitable for applications  
such as power switch of portable machine and so on.  
6
1
5
2
4
3
0 to 0.1  
FEATURES  
• 4.0 V drive available  
• Low on-state resistance  
0.65  
RDS(on)1 = 143 mΩ MAX. (VGS = –10 V, ID = –2.0 A)  
RDS(on)2 = 179 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A)  
RDS(on)3 = 190 mΩ MAX. (VGS = –4.0 V, ID = –2.0 A)  
0.95 0.95  
1.9  
0.9 to 1.1  
2.9 ±0.2  
1
3
4
, 2, 5, 6 : Drain  
ORDERING INFORMATION  
: Gate  
: Source  
PART NUMBER  
PACKAGE  
µPA1918TE  
SC-95 (Mini Mold Thin Type)  
Marking: TS  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
EQUIVALENT CIRCUIT  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TA = 25°C)  
Drain Current (pulse) Note1  
Total Power Dissipation  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
–60  
m20  
V
V
Drain  
m3.5  
A
Body  
Diode  
m14  
A
Gate  
0.2  
W
W
°C  
°C  
Gate  
Protection  
Diode  
Total Power Dissipation Note2  
PT2  
2.0  
Channel Temperature  
Tch  
150  
Source  
Storage Temperature  
Tstg  
–55 to +150  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%  
2. Mounted on FR-4 board, t ≤ 5 sec.  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When  
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated  
voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published June 2002 NS CP(K)  
Printed in Japan  
G15926EJ1V0DS00 (1st edition)  
©
2002  
12345678

中文翻译

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UPA1919 NEC

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UPA1919TE(0)-T1-A RENESAS

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 		Power MOSFETs for Automotive, TMM, /Tape
UPA1919TE-AT RENESAS

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UPA1919TE-T2 RENESAS

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 		TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,6A I(D),TSOP

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