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UPA1916TE-A

更新时间： 2024-02-09 12:59:50

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管场效应晶体管开关
页数	文件大小	规格书
8页	64K
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中文翻译

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UPA1916TE-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA1916

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µPA1916 is a switching device which can be driven

directly by a 1.8 V power source.

+0.1

–0.05

+0.1

–0.06

0.32

0.16

This device features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

0 to 0.1

FEATURES

• 1.8 V drive available

• Low on-state resistance

R^DS(on)1= 39 mΩ MAX. (V^GS= –4.5 V, I^D= –2.5 A)

R^DS(on)2= 49 mΩ MAX. (V^GS= –3.0 V, I^D= –2.5 A)

R^DS(on)3= 55 mΩ MAX. (V^GS= –2.5 V, I^D= –2.5 A)

R^DS(on)4= 98 mΩ MAX. (V^GS= –1.8 V, I^D= –1.5 A)

0.65

0.95 0.95

1.9

0.9 to 1.1

2.9 ±0.2

, 2, 5, 6 : Drain

ORDERING INFORMATION

: Gate

: Source

PART NUMBER

PACKAGE

µPA1916TE^Note

SC-95 (Mini Mold Thin Type)

EQUIVALENT CIRCUIT

Note Marking: TL

Drain

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

–12

Body

Diode

Gate

m8.0

m4.5

Gate

Protection

Diode

m18

0.2

Source

Total Power Dissipation (T^A= 25°C)

Total Power Dissipation (T^A= 25°C)^Note2

Channel Temperature

°C

P^T2

2.0

Tch

150

Storage Temperature

Tstg

–55 to +150 °C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board, t ≤ 5 sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

G15635EJ1V0DS00 (1st edition)

Date Published December 2001 NS CP(K)

Printed in Japan

2001

12 3 4 5 6 7 8

中文翻译

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