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UPA1914TE-A

更新时间： 2024-02-17 21:20:05

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管场效应晶体管开关
页数	文件大小	规格书
8页	68K
描述
Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, THIN, MINIMOLD, SC-95, 6 PIN

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UPA1914TE-A 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	配置：	Single
最大漏极电流 (Abs) (ID)：	4.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

UPA1914TE-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA1914

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The µPA1914 is a switching device which can be driven

directly by a 4 V power source.

+0.1

–0.05

+0.1

–0.06

0.32

0.16

The µPA1914 features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

0 to 0.1

FEATURES

• Can be driven by a 4 V power source

• Low on-state resistance

0.65

0.95 0.95

1.9

DS(on)1

DS(on)2

DS(on)3

= 57 mΩ MAX. (V = –10 V, I = –2.5 A)

= 86 mΩ MAX. (V = –4.5 V, I = –2.5 A)

0.9 to 1.1

2.9 ±0.2

= 96 mΩ MAX. (V = –4.0 V, I = –2.5A)

1, 2, 5, 6 : Drain

: Gate

: Source

ORDERING INFORMATION

PART NUMBER

PACKAGE

EQUIVALENT CIRCUIT

µPA1914TE

6-pin Mini Mold (Thin Type)

Drain

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Body

Diode

DSS

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse) ^Note1

Total Power Dissipation

Total Power Dissipation ^Note2

Channel Temperature

Storage Temperature

–30

±20

±4.5

±18

0.2

Gate

GSS

D(DC)

Gate

Protection

Diode

D(pulse)

Source

°C

Marking: TF

150

stg

–55 to +150 °C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. Mounted on FR-4 Board, t ≤ 5 sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published June 1999 NS CP(K)

Printed in Japan

D13810EJ1V0DS00 (1st edition)

1998, 1999

12 3 4 5 6 7 8

中文翻译

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与UPA1914TE-A相关器件

型号	品牌	获取价格	描述	数据表
UPA1914TE-T1	RENESAS	获取价格	UPA1914TE-T1
UPA1914TE-T1-A	RENESAS	获取价格	Power MOSFETs for Automotive, TMM, /Tape
UPA1914TE-T2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,4.5A I(D),TSOP
UPA1914TE-T2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,4.5A I(D),TSOP
UPA1915	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1915TE	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1915TE-A	RENESAS	获取价格	4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-95, 6 PIN
UPA1916	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1916TE	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1916TE(0)-T1-AT	RENESAS	获取价格	Power MOSFETs for Automotive, TMM, /Tape

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