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UPA1914TE

更新时间： 2024-09-30 22:41:43
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
8页 68K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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UPA1914TE 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：SC-95包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.19Is Samacsys：N
其他特性：ESD PROTECTED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (ID)：4.5 A
最大漏源导通电阻：0.096 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G6JESD-609代码：e0
元件数量：1端子数量：6
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

UPA1914TE 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
PA1914  
µ
P-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The µPA1914 is a switching device which can be driven  
directly by a 4 V power source.  
+0.1  
–0.05  
+0.1  
–0.06  
0.32  
0.16  
The µPA1914 features a low on-state resistance and excellent  
switching characteristics, and is suitable for applications such  
as power switch of portable machine and so on.  
6
1
5
2
4
3
0 to 0.1  
FEATURES  
• Can be driven by a 4 V power source  
• Low on-state resistance  
0.65  
0.95 0.95  
1.9  
DS(on)1  
R
DS(on)2  
R
DS(on)3  
R
GS  
D
= 57 mΩ MAX. (V = –10 V, I = –2.5 A)  
GS  
D
= 86 mΩ MAX. (V = –4.5 V, I = –2.5 A)  
0.9 to 1.1  
2.9 ±0.2  
GS  
D
= 96 mΩ MAX. (V = –4.0 V, I = –2.5A)  
1, 2, 5, 6 : Drain  
3
4
: Gate  
: Source  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
EQUIVALENT CIRCUIT  
µPA1914TE  
6-pin Mini Mold (Thin Type)  
Drain  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Body  
Diode  
DSS  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Drain Current (pulse) Note1  
Total Power Dissipation  
Total Power Dissipation Note2  
Channel Temperature  
Storage Temperature  
V
V
–30  
±20  
±4.5  
±18  
0.2  
2
V
Gate  
GSS  
V
A
D(DC)  
Gate  
Protection  
Diode  
I
D(pulse)  
I
A
Source  
T1  
P
W
W
°C  
Marking: TF  
T2  
P
ch  
T
150  
stg  
T
–55 to +150 °C  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %  
2. Mounted on FR-4 Board, t ≤ 5 sec.  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published June 1999 NS CP(K)  
Printed in Japan  
D13810EJ1V0DS00 (1st edition)  
1998, 1999  
©
12345678

中文翻译

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UPA1914TE(0)-T1-AT RENESAS

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 		Power MOSFETs for Automotive, TMM, /Tape
UPA1914TE-A NEC

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 		Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
UPA1914TE-A RENESAS

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 		4500mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, MINIMOLD, SC-95, 6 PIN
UPA1914TE-T1 RENESAS

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 		UPA1914TE-T1
UPA1914TE-T1-A RENESAS

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 		Power MOSFETs for Automotive, TMM, /Tape
UPA1914TE-T2-A RENESAS

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 		TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,4.5A I(D),TSOP
UPA1914TE-T2-AT RENESAS

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 		TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,4.5A I(D),TSOP
UPA1915 NEC

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 		P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1915TE NEC

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 		P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1915TE-A RENESAS

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 		4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-95, 6 PIN

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