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UPA1913TE-A PDF预览

UPA1913TE-A

更新时间： 2024-02-25 08:02:57
品牌 Logo 应用领域
瑞萨 - RENESAS 开关光电二极管晶体管
页数 文件大小 规格书
8页 66K
描述
4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-95, 6 PIN

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UPA1913TE-A 技术参数

生命周期：Transferred零件包装代码：SC-95
包装说明：SMALL OUTLINE, R-PDSO-G6针数：6
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.34
其他特性：ESD PROTECTED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (ID)：4.5 A
最大漏源导通电阻：0.09 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G6元件数量：1
端子数量：6工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON

UPA1913TE-A 数据手册

 浏览型号UPA1913TE-A的Datasheet PDF文件第2页浏览型号UPA1913TE-A的Datasheet PDF文件第3页浏览型号UPA1913TE-A的Datasheet PDF文件第4页浏览型号UPA1913TE-A的Datasheet PDF文件第5页浏览型号UPA1913TE-A的Datasheet PDF文件第6页浏览型号UPA1913TE-A的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
µPA1913  
P-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The µPA1913 is a switching device which can be driven  
directly by a 2.5-V power source.  
+0.1  
–0.05  
+0.1  
–0.06  
0.32  
0.16  
The µPA1913 features a low on-state resistance and excellent  
switching characteristics, and is suitable for applications such  
as power switch of portable machine and so on.  
6
1
5
2
4
3
0 to 0.1  
FEATURES  
• Can be driven by a 2.5-V power source  
• Low on-state resistance  
0.65  
0.95 0.95  
1.9  
RDS(on)1 = 55 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)  
RDS(on)2 = 58 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A)  
RDS(on)3 = 82 mΩ MAX. (VGS = –2.7 V, ID = –2.5A)  
RDS(on)4 = 90 mΩ MAX. (VGS = –2.5 V, ID = –2.5A)  
0.9 to 1.1  
2.9 ±0.2  
1
, 2, 5, 6 : Drain  
3
4
: Gate  
: Source  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
EQUIVALENT CIRCUIT  
µPA1913TE  
SC-95 (Mini Mold Thin Type)  
Drain  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Body  
Diode  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Drain Current (pulse) Note1  
Total Power Dissipation  
Total Power Dissipation Note2  
Channel Temperature  
Storage Temperature  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
–20  
±12  
±4.5  
±18  
0.2  
2
V
Gate  
V
A
Gate  
Protection  
Diode  
A
Source  
W
W
°C  
Marking: TE  
PT2  
Tch  
150  
Tstg  
–55 to +150 °C  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %  
2. Mounted on FR4 board, t ≤ 5 sec.  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage  
exceeding the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
The mark ! shows major revised points.  
Document No. D13807EJ3V0DS00 (3rd edition)  
Date Published May 2001 NS CP(K)  
Printed in Japan  
1998, 1999  
©
12345678

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UPA1914TE-A RENESAS

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 		4500mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, THIN, MINIMOLD, SC-95, 6 PIN

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