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UPA1911ATE-A

更新时间： 2024-02-24 11:34:10
品牌 Logo 应用领域
日电电子 - NEC 开关光电二极管晶体管
页数 文件大小 规格书
8页 382K
描述
Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SC-95, 6 PIN

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UPA1911ATE-A 技术参数

生命周期：Transferred零件包装代码：SC-95
包装说明：SMALL OUTLINE, R-PDSO-G6针数：6
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.16
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (ID)：2.5 A最大漏源导通电阻：0.12 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G6
元件数量：1端子数量：6
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

UPA1911ATE-A 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
µ
PA1911A  
P-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit : mm)  
The µPA1911A is a switching device which can be driven  
directly by a 2.5 V power source.  
+0.1  
–0.05  
+0.1  
–0.06  
0.32  
0.16  
The µPA1911A features a low on-state resistance and excellent  
switching characteristics, and is suitable for applications such as  
power switch of portable machine and so on.  
6
1
5
2
4
3
0 to 0.1  
FEATURES  
• Can be driven by a 2.5 V power source  
• Low on-state resistance  
0.65  
DS(on)1  
R
DS(on)2  
R
DS(on)3  
R
GS  
D
= 115 mΩ MAX. (V = –4.5 V, I = –1.5 A)  
= 120 mΩ MAX. (V = –4.0 V, I = –1.5 A)  
= 190 mΩ MAX. (V = –2.5 V, I = –1.0 A)  
0.95 0.95  
1.9  
GS  
D
0.9 to 1.1  
GS  
D
2.9 ±0.2  
1
3
4
, 2, 5, 6 : Drain  
ORDERING INFORMATION  
: Gate  
: Source  
PART NUMBER  
PACKAGE  
Note  
µPA1911ATE  
SC-95 (Mini Mold Thin Type)  
Note Marking: TK  
EQUIVALENT CIRCUIT  
Drain  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
GS  
DSS  
Drain to Source Voltage (V = 0 V)  
V
–20  
# 12  
# 2.5  
# 10  
0.2  
V
DS  
GSS  
Gate to Source Voltage (V = 0 V)  
V
V
A
Body  
Diode  
Gate  
D(DC)  
Drain Current (DC)  
Drain Current (pulse) Note1  
I
D(pulse)  
I
A
Gate  
Protection  
Diode  
T1  
Total Power Dissipation  
P
W
W
°C  
Source  
Note2  
A
Total Power Dissipation (T = 25°C)  
T2  
P
ch  
T
2
Channel Temperature  
Storage Temperature  
150  
stg  
T
–55 to +150 °C  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%  
2. Mounted on FR-4 board, t ≤ 5 sec.  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When  
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated  
voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published April 2001 NS CP(K)  
Printed in Japan  
G15044EJ1V0DS00 (1st edition)  
2001  
©
12345678

中文翻译

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UPA1911ATE-T1 RENESAS

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 		UPA1911ATE-T1
UPA1911ATE-T1-AT RENESAS

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 		TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2.5A I(D),TSOP
UPA1911ATE-T2 RENESAS

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 		UPA1911ATE-T2
UPA1911ATE-T2-A RENESAS

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 		TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2.5A I(D),TSOP
UPA1911TE NEC

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 		P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1911TE-A NEC

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 		Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
UPA1912 NEC

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 		P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
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UPA1913 NEC

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