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UPA1911

更新时间： 2024-11-18 22:41:43

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管场效应晶体管开关
页数	文件大小	规格书
8页	67K
描述
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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中文翻译

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数据手册

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UPA1911 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

PA1911

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The µPA1911 is a switching device which can be driven

+0.1

–0.05

+0.1

–0.06

0.32

0.16

directly by a 2.5 V power source.

The µPA1911 features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

0 to 0.1

FEATURES

• Can be driven by a 2.5 V power source

• Low on-state resistance

0.65

0.95 0.95

1.9

DS(on)1

DS(on)2

DS(on)3

= 115 mΩ MAX. (V = –4.5 V, I = –1.5 A)

= 120 mΩ MAX. (V = –4.0 V, I = –1.5 A)

0.9 to 1.1

2.9 ±0.2

= 190 mΩ MAX. (V = –2.5 V, I = –1.0A)

1, 2, 5, 6 : Drain

: Gate

: Source

ORDERING INFORMATION

PART NUMBER

PACKAGE

EQUIVALENT CIRCUIT

µPA1911TE

6-pin Mini Mold (Thin Type)

Drain

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Body

Diode

DSS

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse) ^Note1

Total Power Dissipation

Total Power Dissipation ^Note2

Channel Temperature

Storage Temperature

–20

–12/+6

# 2.5

# 10

0.2

Gate

GSS

D(DC)

Gate

Protection

Diode

D(pulse)

Source

°C

Marking: TC

150

stg

–55 to +150 °C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. Mounted on FR-4 board, t ≤ 5 sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

D13455EJ1V0DS00 (1st edition)

Date Published September 1999 NS CP(K)

Printed in Japan

1998, 1999

12 3 4 5 6 7 8

中文翻译

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与UPA1911相关器件

型号	品牌	获取价格	描述	数据表
UPA1911A	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1911ATE	RENESAS	获取价格	2500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-95, 6 PIN
UPA1911ATE	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1911ATE-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
UPA1911ATE-T1	RENESAS	获取价格	UPA1911ATE-T1
UPA1911ATE-T1-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2.5A I(D),TSOP
UPA1911ATE-T2	RENESAS	获取价格	UPA1911ATE-T2
UPA1911ATE-T2-A	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2.5A I(D),TSOP
UPA1911TE	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA1911TE-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal

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