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UNR2122 PDF预览

UNR2122

更新时间: 2024-09-16 03:57:11
品牌 Logo 应用领域
松下 - PANASONIC 晶体开关小信号双极晶体管光电二极管
页数 文件大小 规格书
5页 108K
描述
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits

UNR2122 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SC-59包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.83Is Samacsys:N
其他特性:BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-G3
JESD-609代码:e6湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

UNR2122 数据手册

 浏览型号UNR2122的Datasheet PDF文件第2页浏览型号UNR2122的Datasheet PDF文件第3页浏览型号UNR2122的Datasheet PDF文件第4页浏览型号UNR2122的Datasheet PDF文件第5页 
Composite Transistors  
XN04381 (XN4381)  
Silicon NPN epitaxial planar type (Tr1)  
Silicon PNP epitaxial planar type (Tr2)  
Unit: mm  
+0.20  
–0.05  
1.9 0.1  
(0.95) (0.95)  
2.90  
For switching/digital circuits  
+0.10  
0.16  
–0.06  
4
3
5
6
Features  
Two elements incorporated into one package  
(Transistors with built-in resistor)  
2
1
Reduction of the mounting area and assembly cost by one half  
+0.10  
–0.05  
0.30  
0.50  
Basic Part Number  
+0.10  
–0.05  
UNR2213 (UN2213) + UNR2122 (UN2122)  
10˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
Tr1  
Tr2  
Collector-base voltage  
(Emitter open)  
VCBO  
50  
V
1: Collector (Tr1)  
2: Base (Tr2)  
3: Emitter (Tr2)  
EIAJ: SC-74  
4: Collector (Tr2)  
5: Base (Tr1)  
6: Emitter (Tr1)  
Collector-emitter voltage  
(Base open)  
VCEO  
50  
V
Mini6-G1 Package  
Collector current  
IC  
100  
mA  
V
Marking Symbol: CW  
Internal Connection  
Collector-base voltage  
(Emitter open)  
VCBO  
50  
Collector-emitter voltage  
(Base open)  
VCEO  
50  
V
4
5
6
Collector current  
IC  
PT  
Tj  
500  
300  
mA  
mW  
°C  
Tr2  
Overall Total power dissipation  
Junction temperature  
Tr1  
1
150  
Storage temperature  
Tstg  
55 to +150  
°C  
3
2
Note) The part number in the parenthesis shows conventional part number.  
Publication date: July 2003  
SJJ00068BED  
1

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