Datasheet > UNR2124(UN2124)

UNR2124(UN2124)

更新时间： 2024-10-31 23:39:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
7页	118K
描述
Composite Device - Transistors with built-in Resistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UNR2124(UN2124) 数据手册

Transistors with built-in Resistor

UNR2121/2122/2123/2124/212X/212Y

(UN2121/2122/2123/2124/212X/212Y)

Silicon PNP epitaxial planer transistor

Unit: mm

+0.10

–0.05

0.40

+0.10

–0.06

0.16

For digital circuits

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

• Mini type package, allowing downsizing of the equipment and

automatic insertion through tape packing and magazine packing.

(0.95) (0.95)

1.9±0.1

+0.20

–0.05

2.90

■ Resistance by Part Number

10˚

Marking Symbol (R₁)

(R₂)

• UNR2121 (UN2121)

• UNR2122 (UN2122)

• UNR2123 (UN2123)

• UNR2124 (UN2124)

• UNR212X (UN212X)

• UNR212Y (UN212Y)

2.2 kΩ

4.7 kΩ

10 kΩ

2.2 kΩ

0.27 kΩ

3.1 kΩ

2.2 kΩ

4.7 kΩ

10 kΩ

5 kΩ

1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package

4.6 kΩ

■ Absolute Maximum Ratings T_a= 25°C

Internal Connection

Parameter

Collector to base voltage

Collector to emitter voltage

Collector current

Symbol

V_CBO

V_CEO

I_C

Rating

Unit

−50

R₁

−500

°C

R₂

Total power dissipation

Junction temperature

Storage temperature

P_T

200

T_j

150

T_stg

−55 to +150

°C

■ Electrical Characteristics T_a= 25°C

Parameter

Collector cutoff current

UNR212X

Symbol

Conditions

Min

Typ

Max

−1

Unit

I_CBO

_CB= −50 V, I_E= 0

_CE= −50 V, I_B= 0

_EB= −6 V, I_C= 0

µA

− 0.1

−1

Collector cutoff current

UNR212X

I_CEO

µA

− 0.5

−5

Emitter

cutoff

UNR2121

I_EBO

UNR2122/212X/212Y

UNR2123/2124

−2

current

−1

Collector to base voltage

Forward UNR2121

V_CBO

h_FE

_C= −10 µA, I_E= 0

−50

_CE= −10 V, I_C= −100 mA

current

transfer

ratio

UNR2122/212Y

UNR2123/2124

UNR212X

Note) The part numbers in the parenthesis show conventional part number.

Publication date: January 2002

SJH00008BED

12 3 4 5 6 7

中文翻译

下载PDF

与UNR2124(UN2124)相关器件

型号	品牌	获取价格	描述	数据表
UNR2124\|UN2124	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR212X	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR212X(UN212X)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR212X\|UN212X	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR212Y	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR212Y(UN212Y)	ETC	获取价格	複合デバイス－抵抗内蔵型トランジスタ
UNR212Y\|UN212Y	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR2-1410	TELEDYNE	获取价格	Highest Stability Near Temperature Independency
UNR2-1410	RIEDON	获取价格	Precision Foil Resistors
UNR2-14101.01OHMS0.25%3PPM	VISHAY	获取价格	Fixed Resistor, Metal Foil, 0.8W, 1.01ohm, 0.25% +/-Tol, -3,3ppm/Cel, 5512

与UNR2124(UN2124)相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

22
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

23
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

46
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

54

产品中心

服务支持

精选活动

关于我们

帮助中心

UNR2124(UN2124)

UNR2124(UN2124) 数据手册

与UNR2124(UN2124)相关器件

与UNR2124(UN2124)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UNR2124(UN2124)

UNR2124(UN2124) 数据手册

与UNR2124(UN2124)相关器件

与UNR2124(UN2124)相关文章

您还可以找

您在本页遇到什么问题？