Datasheet > UNR2124|UN2124

UNR2124|UN2124

更新时间： 2024-09-15 23:39:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
7页	177K
描述
Composite Device - Transistors with built-in Resistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UNR2124|UN2124 数据手册

Transistors with built-in Resistor

UNR212x Series (UN212x Series)

Silicon PNP epitaxial planar type

Unit: mm

+0.10

–0.05

0.40

+0.10

For digital circuits

0.16

–0.06

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

• Mini type package allowing easy automatic insertion through tape

(0.95) (0.95)

packing and magazine packing

1.9 ^0.1

+0.20

2.90

–0.05

■ Resistance by Part Number

10˚

Marking Symbol (R₁)

(R₂)

• UNR2121 (UN2121)

• UNR2122 (UN2122)

• UNR2123 (UN2123)

• UNR2124 (UN2124)

• UNR212X (UN212X)

• UNR212Y (UN212Y)

2.2 kΩ

4.7 kΩ

10 kΩ

2.2 kΩ

0.27 kΩ

3.1 kΩ

2.2 kΩ

4.7 kΩ

10 kΩ

5 kΩ

1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package

4.6 kΩ

Internal Connection

■ Absolute Maximum Ratings T_a= 25°C

R₁

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

−50

R₂

Collector current

I_C

P_T

−500

°C

200

Total power dissipation

Junction temperature

Storage temperature

T_j

150

T_stg

−55 to +150

°C

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

Conditions

Min

−50

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

UNR212X

I_C= −10 µA, I_E= 0

I_C= −2 mA, I_B= 0

V_CB= −50 V, I_E= 0

I_CBO

−1.0

− 0.1

−1.0

− 0.5

−5

µA

Collector-emitter cutoff current (Base open)

UNR212X

I_CEO

V_CE= −50 V, I_B= 0

V_EB= −6 V, I_C= 0

µA

Emitter-base UNR2121

I_EBO

cutoff current UNR2122/212X/212Y

(Collector open) UNR2123/2124

Forward current UNR2121

−2

−1

h_FE

V_CE= −10 V, I_C= −5 mA



ratio UNR2122/212Y

UNR2123/2124

UNR212X

transfer

Note) The part numbers in the parenthesis show conventional part number.

Publication date: December 2003

SJH00008CED

12 3 4 5 6 7

中文翻译

下载PDF

与UNR2124|UN2124相关器件

型号	品牌	获取价格	描述	数据表
UNR212X	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR212X(UN212X)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR212X\|UN212X	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR212Y	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR212Y(UN212Y)	ETC	获取价格	複合デバイス－抵抗内蔵型トランジスタ
UNR212Y\|UN212Y	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR2-1410	TELEDYNE	获取价格	Highest Stability Near Temperature Independency
UNR2-1410	RIEDON	获取价格	Precision Foil Resistors
UNR2-14101.01OHMS0.25%3PPM	VISHAY	获取价格	Fixed Resistor, Metal Foil, 0.8W, 1.01ohm, 0.25% +/-Tol, -3,3ppm/Cel, 5512
UNR2-14101.07OHMS0.25%3PPM	VISHAY	获取价格	Fixed Resistor, Metal Foil, 0.8W, 1.07ohm, 0.25% +/-Tol, -3,3ppm/Cel, 5512

与UNR2124|UN2124相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

6
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

6
SL74HC10N：高性能三输入与非门解析
2024-09-03

88
AIC1781A 电池充电控制器深度解析
2024-09-03

79

产品中心

服务支持

精选活动

关于我们

帮助中心

UNR2124|UN2124

UNR2124|UN2124 数据手册

与UNR2124|UN2124相关器件

与UNR2124|UN2124相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UNR2124|UN2124

UNR2124|UN2124 数据手册

与UNR2124|UN2124相关器件

与UNR2124|UN2124相关文章

您还可以找

您在本页遇到什么问题？