Datasheet > UMT2N

UMT2N

更新时间： 2024-09-16 14:52:35

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1165K
描述
SOT-363

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中文翻译

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数据手册

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UMT2N 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-363 Plastic-Encapsulate Transistors

DUAL TRANSISTOR (PNP+PNP)

UMT2N

SOT-363

FEATURES

Two 2SA1037AK chips in SOT-363 package

MARKING: T2

Absolute maximum ratings (T_a=25℃)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-60

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-6

Collector Current

-150

150

833

℃/W

P_C

Collector Power Dissipation

Thermal Resistance from Junction to Ambient

R_θJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~+150

℃

Electrical Characteristics (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

-60

-50

-6

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-50μA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBOI_E=-50μA, I_C=0

I_CBO

I_EBO

h_FE

V_CB=-60V, I_E=0

-0.1

560

-0.5

μA

Emitter cut-off current

V_EB=-6V, I_C=0

DC current gain

V_CE=-6V, I_C=-1mA

I_C=-50mA, I_B=-5mA

120

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

V_CE=-12V, I_C=-2mA, f=100MHz

V_CB=-12V, I_E=0, f=1MHz

140

MHz

Collector output capacitance

C_ob

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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