UMT4401 / SST4401 / MMST4401 / 2N4401
Transistors
NPN Medium Power Transistor
(Switching)
UMT4401 / SST4401 / MMST4401 / 2N4401
!External dimensions (Units : mm)
!Features
2.0±0.2
UMT4401
0.9±0.1
1.3±0.1
0.65 0.65
(1) (2)
C
1) BV 40V (I =1mA)
CEO>
0.7±0.1
0.2
2) Complements the UMT4403 / SST4403 / MMST4403
/ PN4403.
0~0.1
(3)
(1) Emitter
(2) Base
(3) Collector
+0.1
0.3
ROHM : UMT3
EIAJ : SC-70
0.15±0.05
−0
All terminals have the same
dimensions
SST4401
2.9
±
0.2
!Package, marking, and packaging specifications
+0.2
0.95
−
0.1
1.9±
0.2
0.45±0.1
Part No.
Packaging type
Marking
UMT4401 SST4401 MMST4401 2N4401
0.95 0.95
UMT3
R2X
SST3
R2X
SMT3
R2X
TO-92
-
(2)
(1)
0
~
0.1
0.2Min.
T106
3000
T116
3000
T146
3000
T93
3000
Code
Basic ordering unit (pieces)
(3)
(1) Emitter
(2) Base
(3) Collector
All terminals have the same
dimensions
+0.1
0.15
+0.1
−
0.06
0.4
−
0.05
ROHM : SST3
MMST4401
2.9
±
0.2
0.2
+0.2
1.1
−
0.1
1.9±
0.8 0.1
±
!Absolute maximum ratings (Ta=25°C)
0.95 0.95
(2)
(1)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
Unit
V
0~0.1
V
V
V
CBO
CEO
EBO
60
40
V
(3)
All terminals have the same
dimensions
+0.1
0.4
−0.05
6
V
(1) Emitter
(2) Base
(3) Collector
+0.1
0.06
0.15
−
ROHM : SMT3
EIAJ : SC-59
I
C
0.6
A
UMT4401
4.8±0.2
3.7±0.2
0.2
SST4401
MMST4401
Collector power
dissipation
2N4401
P
C
W
2N4401
0.625
150
Junction temperature
Storage temperature
Tj
˚C
˚C
Tstg
-55~+150
0.5±0.1.
(1) Emitter
(2) Base
(3) Collector
(1) (2) (3)
5
+0.3
2.5
−
0.1
ROHM : TO-92
EIAJ : SC-43
0.45±0.1
2.3
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
60
40
6
-
-
-
-
-
-
-
-
-
-
-
-
V
V
I
I
I
C
=
=
100µA
1mA
C
-
V
E
=
100µA
I
CBO
0.1
0.1
0.4
0.75
0.95
1.2
µA
µA
V
V
CB
EB
=
35V
Emitter cutoff current
I
EBO
-
=
5V
-
I
I
I
I
C
/I
/I
/I
/I
B
=
150mA/15mA
500mA/50mA
150mA/15mA
500mA/50mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
BE(sat)
V
V
-
C
C
C
B
=
=
=
-
B
B
V
-
20
40
80
100
40
250
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
CE
CE
CE
CE
CE
=
1V, I
1V, I
1V, I
1V, I
2V, I
C
C
C
C
C
=
=
=
=
=
0.1mA
1mA
=
=
=
=
DC current transfer ratio
h
FE
-
-
10mA
150mA
500mA
300
-
-
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
f
T
MHz
pF
pF
ns
V
V
V
V
V
V
V
CE
CB
=
=
10V, I
E
=-20mA, f
100kHz
100kHz
=100MHz
Cob
Cib
td
6.5
30
15
20
225
30
10V, f=
-
EB
=
0.5V, f
=
-
CC
CC
CC
CC
=
30V, VEB(OFF)
30V, VEB(OFF)
=
=
2V, I
2V, I
C
=
=
150mA, IB1
=
=
15mA
15mA
Rise time
tr
-
ns
=
=
=
C
150mA, IB1
Storage time
tstg
tf
-
ns
30V, I
30V, I
C
=
=
150mA, IB1=-
150mA, IB1=-
I
I
B2
=
=
15mA
15mA
Fall time
-
ns
C
B2