Datasheet > UMBF170

UMBF170

更新时间： 2024-11-09 07:09:11

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
2页	148K
描述
N-CHANNEL ENHANCEMENT MODE

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数据手册

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UMBF170 数据手册

UNISONIC TECHNOLOGIES CO., LTD

UMBF170

Preliminary

Power MOSFET

N-CHANNEL ENHANCEMENT

MODE

DESCRIPTION

The UMBF170 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in

PWM applications.

FEATURES

SOT-23-3

(JEDEC TO-236)

* R_DS(ON)<5Ω@V_GS=10V

* R_DS(ON)<5.3Ω@V_GS=4.5V

* Low Reverse Transfer Capacitance ( C_RSS= typical 7.5 pF )

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness

SYMBOL

3.Drain

2.Gate

1.Source

ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

Packing

Tape Reel

UMBF170G-AE2-R

SOT-23-3

MARKING

www.unisonic.com.tw

1 of 4

QW-R502-291.b

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