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UMC3

更新时间: 2024-10-29 22:17:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
10页 91K
描述
Dual Common Base-Collector Bias Resistor Transistors

UMC3 数据手册

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UMC2NT1, UMC3NT1,  
UMC5NT1  
Preferred Devices  
Dual Common  
Base−Collector Bias  
Resistor Transistors  
http://onsemi.com  
NPN and PNP Silicon Surface Mount  
Transistors with Monolithic Bias  
Resistor Network  
3
2
1
R1  
R2  
The Bias Resistor Transistor (BRT) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the UMC2NT1 series, two  
complementary BRT devices are housed in the SOT−353 package  
which is ideal for low power surface mount applications where board  
space is at a premium.  
Q2  
R2  
Q1  
R1  
4
5
Features  
MARKING  
DIAGRAM  
Pb−Free Packages are Available  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
Available in 8 mm, 7 inch/3000 Unit Tape and Reel  
5
4
d
SC−88A/SOT−353  
CASE 419A  
STYLE 6  
Ux  
1
2
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q  
A
1
and Q , − minus sign for Q (PNP) omitted)  
2
1
Rating  
Collector-Base Voltage  
Symbol  
Value  
50  
Unit  
Ux = Device Marking  
V
CBO  
Vdc  
Vdc  
x
= 2, 3 or 5  
d
= Date Code  
Collector-Emitter Voltage  
Collector Current  
V
CEO  
50  
I
C
100  
mAdc  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
THERMAL CHARACTERISTICS  
Thermal Resistance − Junction-to-Ambient  
(surface mounted)  
R
833  
°C/W  
°C  
θ
JA  
Operating and Storage Temperature Range  
T , T  
J
65 to  
+150  
stg  
Total Package Dissipation  
P
D
*150  
mW  
@ T = 25°C (Note 1)  
A
1. Device mounted on a FR-4 glass epoxy printed circuit board using the  
minimum recommended footprint.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
September, 2004 − Rev. 5  
UMC2NT1/D  
 

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