Datasheet > UMC3N

UMC3N

更新时间： 2024-09-14 14:54:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	739K
描述
SOT-353

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中文翻译

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数据手册

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UMC3N 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

Digital Transistors (Built-in Resistors)

Dual Digital Transistors (NPN+PNP)

UMC3N

SOT-353

FEATURES

DTA114E and DTC114E transistors are built-in a package

Ideal for power switch circuits

Mounting cost and area can be cut in half

MARKING: C3

NPN DTC114E Absolute maximum ratings (Ta=25℃)

Parameter

Supply voltage

Input voltage

Symbol

V_CC

V_IN

Unit

Limits

-10~+40

I_O

Output current

℃

I_CM

100

Power dissipation

P_D

150

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~+150

Electrical characteristics (Ta=25℃)

Parameter

Symbol

V_I(off)

V_I(on)

V_O(on)

I_I

Min

Typ

Max

Unit

Conditions

0.5

V_CC=5V ,I_O=100μA

V_O=0.3V ,I_O=10mA

I_O/I_I=10mA/0.5mA

V_I=5V

Input voltage

Output voltage

Input current

0.3

0.88

0.5

μA

Output current

I_O(off)

G_I

V_CC=50V, V_I=0

DC current gain

Input resistance

Resistance ratio

Transition frequency

V_O=5V,I_O=5mA

R₁

kΩ

R₂/R₁

f_T

0.8

1.2

250

MHz

_CE=10V ,I_E=-5mA,f=100MHz

PNP DTA114E Absolute maximum ratings (Ta=25℃)

Parameter

Supply voltage

Input voltage

Symbol

V_CC

V_IN

Unit

Limits

-50

-40~+10

-50

I_O

Output current

℃

I_CM

-100

Power dissipation

P_D

150

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~+150

Electrical characteristics (Ta=25℃)

Parameter

Symbol

V_I(off)

V_I(on)

V_O(on)

I_I

Min

-0.5

Typ

Max

Unit

Conditions

_CC=-5V ,I_O=-100μA

Input voltage

-3

V_O=-0.3V ,I_O=-10mA

I_O/I_I=-10mA/-0.5mA

V_I=-5V

Output voltage

Input current

-0.3

-0.88

-0.5

μA

Output current

I_O(off)

G_I

V_CC=-50V, V_I=0

DC current gain

Input resistance

Resistance ratio

Transition frequency

V_O=-5V,I_O=-5mA

R₁

kΩ

R₂/R₁

f_T

0.8

1.2

250

MHz

_CE=-10V ,I_E=5mA,f=100MHz

www.jscj-elec.com

Rev. - 2.0

12 3 4 5

中文翻译

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