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UMC4N-7 PDF预览

UMC4N-7

更新时间: 2024-09-13 08:24:15
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
4页 289K
描述
DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS

UMC4N-7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G5
针数:5Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:19 weeks
风险等级:1.72Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):68
JESD-30 代码:R-PDSO-G5JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:5最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

UMC4N-7 数据手册

 浏览型号UMC4N-7的Datasheet PDF文件第2页浏览型号UMC4N-7的Datasheet PDF文件第3页浏览型号UMC4N-7的Datasheet PDF文件第4页 
UMC4N  
DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS  
Features  
Epitaxial Planar Die Construction  
Surface Mount Package Suited for Automated Assembly  
Simplifies Circuit Design and Reduces Board Space  
Lead Free/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
Mechanical Data  
SOT-353  
Case: SOT-353  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
Terminals: Finish – Matte Tin Annealed Over Alloy 42  
Leadframe. Solderable per MIL-STD-202, Method 208  
(1)  
(3)  
(2)  
R1  
R2  
3
4
2
1
5
R2  
Q
R11 = 47k  
R2 = 47k  
Ω
Ω
Q1  
Q2  
Q
2
R1  
R1 = 10k  
Ω
Ω
R2 = 47k  
TOP VIEW  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.006 grams (approximate)  
(4)  
(5)  
Schematic and Pin Configuration  
Maximum Ratings, Total Device @TA = 25°C unless otherwise specified  
Characteristic  
Power Dissipation (Note 3)  
Symbol  
PD  
Value  
150  
Unit  
mW  
Thermal Resistance, Junction to Ambient Air (Note 3)  
Operating and Storage Temperature Range  
833  
°C/W  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
°C  
Maximum Ratings, Pre-Biased NPN Transistor, Q1 @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VCC  
Value  
50  
Unit  
V
Supply Voltage  
Input Voltage  
-10 to +40  
30  
V
VIN  
Output Current  
Collector Current  
mA  
mA  
IO  
100  
IC(MAX)  
Maximum Ratings, Pre-Biased PNP Transistor, Q2 @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VCC  
Value  
-50  
Unit  
V
Supply Voltage  
Input Voltage  
-40 to +6  
-100  
V
VIN  
Output Current  
Collector Current  
mA  
mA  
IO  
-100  
IC(MAX)  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
DS31203 Rev. 3 - 2  
1 of 4  
UMC4N  
© Diodes Incorporated  
www.diodes.com  

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