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UMC3NT2G PDF预览

UMC3NT2G

更新时间： 2024-10-30 02:59:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
10页 86K
描述
Dual Common Base−Collector Bias Resistor Transistors

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中文翻译

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UMC3NT2G 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：SC-88A包装说明：SMALL OUTLINE, R-PDSO-G5
针数：5Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.84
Is Samacsys：N其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：COMMON BASE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：35
JESD-30 代码：R-PDSO-G5JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：5封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN AND PNP
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

UMC3NT2G 数据手册

 浏览型号UMC3NT2G的Datasheet PDF文件第2页浏览型号UMC3NT2G的Datasheet PDF文件第3页浏览型号UMC3NT2G的Datasheet PDF文件第4页浏览型号UMC3NT2G的Datasheet PDF文件第5页浏览型号UMC3NT2G的Datasheet PDF文件第6页浏览型号UMC3NT2G的Datasheet PDF文件第7页 
UMC2NT1, UMC3NT1,  
UMC5NT1  
Preferred Devices  
Dual Common  
Base−Collector Bias  
Resistor Transistors  
http://onsemi.com  
NPN and PNP Silicon Surface Mount  
Transistors with Monolithic Bias  
Resistor Network  
3
2
1
R1  
R2  
The Bias Resistor Transistor (BRT) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the UMC2NT1 series, two  
complementary BRT devices are housed in the SOT−353 package  
which is ideal for low power surface mount applications where board  
space is at a premium.  
Q2  
R2  
Q1  
R1  
4
5
Features  
MARKING  
DIAGRAM  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
5
4
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel  
• Pb−Free Packages are Available  
SC−88A/SOT−353  
CASE 419A  
STYLE 6  
Ux M G  
G
1
2
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q  
A
1
and Q , − minus sign for Q (PNP) omitted)  
2
1
Ux  
x
M
G
= Device Marking  
= 2, 3 or 5  
= Date Code  
= Pb−Free Package  
Rating  
Symbol  
Value  
50  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
Vdc  
Vdc  
CBO  
V
50  
CEO  
(Note: Microdot may be in either location)  
I
100  
mAdc  
C
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
THERMAL CHARACTERISTICS  
Preferred devices are recommended choices for future use  
Thermal Resistance − Junction-to-Ambient  
(surface mounted)  
R
833  
°C/W  
°C  
and best overall value.  
q
JA  
Operating and Storage Temperature Range  
T , T  
J
−65 to  
+150  
stg  
Total Package Dissipation  
P
*150  
mW  
D
@ T = 25°C (Note 1)  
A
1. Device mounted on a FR-4 glass epoxy printed circuit board using the  
minimum recommended footprint.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 6  
UMC2NT1/D  
 
1234567...10

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