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UMC2NT1 PDF预览

UMC2NT1

更新时间： 2024-01-21 17:36:09
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
10页 91K
描述
Dual Common Base-Collector Bias Resistor Transistors

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中文翻译

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UMC2NT1 技术参数

是否无铅： 含铅生命周期：End Of Life
零件包装代码：SC-70包装说明：CASE 419A-02, SC-88A, SC-70, 5 PIN
针数：5Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.37
其他特性：BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：60JESD-30 代码：R-PDSO-G5
JESD-609代码：e0湿度敏感等级：1
元件数量：2端子数量：5
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
极性/信道类型：NPN AND PNP最大功率耗散 (Abs)：0.15 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

UMC2NT1 数据手册

 浏览型号UMC2NT1的Datasheet PDF文件第2页浏览型号UMC2NT1的Datasheet PDF文件第3页浏览型号UMC2NT1的Datasheet PDF文件第4页浏览型号UMC2NT1的Datasheet PDF文件第5页浏览型号UMC2NT1的Datasheet PDF文件第6页浏览型号UMC2NT1的Datasheet PDF文件第7页 
UMC2NT1, UMC3NT1,  
UMC5NT1  
Preferred Devices  
Dual Common  
Base−Collector Bias  
Resistor Transistors  
http://onsemi.com  
NPN and PNP Silicon Surface Mount  
Transistors with Monolithic Bias  
Resistor Network  
3
2
1
R1  
R2  
The Bias Resistor Transistor (BRT) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the UMC2NT1 series, two  
complementary BRT devices are housed in the SOT−353 package  
which is ideal for low power surface mount applications where board  
space is at a premium.  
Q2  
R2  
Q1  
R1  
4
5
Features  
MARKING  
DIAGRAM  
• Pb−Free Packages are Available  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel  
5
4
d
SC−88A/SOT−353  
CASE 419A  
STYLE 6  
Ux  
1
2
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q  
A
1
and Q , − minus sign for Q (PNP) omitted)  
2
1
Rating  
Collector-Base Voltage  
Symbol  
Value  
50  
Unit  
Ux = Device Marking  
V
CBO  
Vdc  
Vdc  
x
= 2, 3 or 5  
d
= Date Code  
Collector-Emitter Voltage  
Collector Current  
V
CEO  
50  
I
C
100  
mAdc  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
THERMAL CHARACTERISTICS  
Thermal Resistance − Junction-to-Ambient  
(surface mounted)  
R
833  
°C/W  
°C  
θ
JA  
Operating and Storage Temperature Range  
T , T  
J
−65 to  
+150  
stg  
Total Package Dissipation  
P
D
*150  
mW  
@ T = 25°C (Note 1)  
A
1. Device mounted on a FR-4 glass epoxy printed circuit board using the  
minimum recommended footprint.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
September, 2004 − Rev. 5  
UMC2NT1/D  
 
1234567...10

中文翻译

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UMC2NT1 替代型号

型号 品牌 替代类型 描述 数据表
UMC2NT1G ONSEMI

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 Dual Common Base-Collector Bias Resistor Transistors

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