Datasheet > UMC2NT1_06

UMC2NT1_06

更新时间： 2024-10-14 03:23:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
10页	86K
描述
Dual Common Base−Collector Bias Resistor Transistors

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中文翻译

获取价格

数据手册

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UMC2NT1_06 数据手册

UMC2NT1, UMC3NT1,

UMC5NT1

Preferred Devices

Dual Common

Base−Collector Bias

Resistor Transistors

http://onsemi.com

NPN and PNP Silicon Surface Mount

Transistors with Monolithic Bias

Resistor Network

The Bias Resistor Transistor (BRT) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the UMC2NT1 series, two

complementary BRT devices are housed in the SOT−353 package

which is ideal for low power surface mount applications where board

space is at a premium.

Features

MARKING

DIAGRAM

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch/3000 Unit Tape and Reel

• Pb−Free Packages are Available

SC−88A/SOT−353

CASE 419A

STYLE 6

Ux M G

MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q

and Q , − minus sign for Q (PNP) omitted)

= Device Marking

= 2, 3 or 5

= Date Code

= Pb−Free Package

Rating

Symbol

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Vdc

CBO

CEO

(Note: Microdot may be in either location)

100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

THERMAL CHARACTERISTICS

Preferred devices are recommended choices for future use

Thermal Resistance − Junction-to-Ambient

(surface mounted)

833

°C/W

°C

and best overall value.

Operating and Storage Temperature Range

T , T

−65 to

+150

stg

Total Package Dissipation

*150

@ T = 25°C (Note 1)

1. Device mounted on a FR-4 glass epoxy printed circuit board using the

minimum recommended footprint.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

April, 2006 − Rev. 6

UMC2NT1/D

12 3 4 5 6 7...10

中文翻译

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与UMC2NT1_06相关器件

型号	品牌	获取价格	描述	数据表
UMC2NT1G	ONSEMI	获取价格	Dual Common Base-Collector Bias Resistor Transistors
UMC2NTL	ROHM	获取价格	暂无描述
UMC2NTR	ROHM	获取价格	暂无描述
UMC2TR	ROHM	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
UMC3	ONSEMI	获取价格	Dual Common Base-Collector Bias Resistor Transistors
UMC33167	UTC	获取价格	5.0A, step-up/down/ inverting switching regulator...
UMC33167G-TA5-T	UTC	获取价格	LINEAR INTEGRATED CIRCUIT
UMC33167G-TB5-T	UTC	获取价格	LINEAR INTEGRATED CIRCUIT
UMC33167L-TA5-T	UTC	获取价格	LINEAR INTEGRATED CIRCUIT
UMC33167L-TB5-T	UTC	获取价格	LINEAR INTEGRATED CIRCUIT

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