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UL635H256SC55 PDF预览

UL635H256SC55

更新时间： 2024-09-19 23:39:15
品牌 Logo 应用领域
其他 - ETC 内存集成电路静态存储器光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
13页 135K
描述
NVRAM (EEPROM Based)

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中文翻译

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UL635H256SC55 数据手册

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UL635H256  
Low Voltage PowerStore 32K x 8 nvSRAM  
Features  
Description  
F High-performance CMOS non-  
The UL635H256 has two separate high performance and ease of use  
volatile static RAM 32768 x 8 bits modes of operation: SRAM mode of a fast SRAM with nonvolatile  
F 45 and 55 ns Access Times  
F 20 and 25 ns Output Enable  
Access Times  
F ICC = 8 mA at 200 ns Cycle Time  
F Automatic STORE to EEPROM  
on Power Down using system  
capacitance  
and nonvolatile mode. In SRAM data integrity.  
mode, the memory operates as an STORE cycles also may be initia-  
ordinary static RAM. In nonvolatile ted under user control via a soft-  
operation, data is transferred in ware sequence.  
parallel from SRAM to EEPROM or Once a STORE cycle is initiated,  
from EEPROM to SRAM. In this further input or output are disabled  
mode SRAM functions are disab- until the cycle is completed.  
F Software initiated STORE  
F Automatic STORE Timing  
F 105 STORE cycles to EEPROM  
F 10 years data retention in  
EEPROM  
led.  
Because a sequence of addresses  
The UL635H256 is a fast static is used for STORE initiation, it is  
RAM (45 and 55 ns), with a nonvo- important that no other read or  
latile electrically erasable PROM write accesses intervene in the  
(EEPROM) element incorporated sequence or the sequence will be  
F Automatic RECALL on Power Up in each static memory cell. The aborted.  
F Software RECALL Initiation  
F Unlimited RECALL cycles from  
EEPROM  
F Wide voltage range: 2.7 ... 3.6 V  
F Operating temperature range:  
0 to 70 °C  
SRAM can be read and written an RECALL cycles may also be initia-  
unlimited number of times, while ted by a software sequence.  
independent nonvolatile data resi- Internally, RECALL is a two step  
des in EEPROM. Data transfers procedure. First, the SRAM data is  
from the SRAM to the EEPROM cleared and second, the nonvola-  
(the STORE operation) take place tile information is transferred into  
automatically upon power down the SRAM cells.  
-40 to 85 °C  
F CECC 90000 Quality Standard  
F ESD protection > 2000 V  
(MIL STD 883C M3015.7-HBM)  
F Packages: SOP28 (330 mil)  
TSOP32 (Type I)  
using charge stored in system The RECALL operation in no way  
capacitance. Transfers from the alters the data in the EEPROM  
EEPROM to the SRAM (the cells. The nonvolatile data can be  
RECALL operation) take place recalled an unlimited number of  
automatically on powerup.  
times.  
The UL635H256 combines the  
Pin Description  
Pin Configuration  
G
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
n.c.  
A10  
E
VCC  
W
A13  
A8  
A9  
A11  
G
A10  
E
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
1
2
3
4
5
6
7
8
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
Signal Name Signal Description  
A11  
A9  
2
3
A0 - A14  
Address Inputs  
Data In/Out  
A8  
4
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
VSS  
DQ2  
DQ1  
DQ0  
A0  
A13  
W
5
DQ0 - DQ7  
6
n. c.  
VCC  
n. c.  
A14  
A12  
A7  
7
Chip Enable  
E
8
9
Output Enable  
Write Enable  
Power Supply Voltage  
Ground  
SOP  
TSOP  
G
10  
11  
12  
13  
14  
15  
16  
32  
31  
30  
29  
9
A0  
10  
11  
12  
13  
14  
28  
27  
26  
W
DQ0  
DQ1  
DQ2  
VSS  
A6  
VCC  
VSS  
A5  
A1  
A4  
A2  
A3  
n.c.  
Top View  
Top View  
1
November 01, 2001  
1234567...13

中文翻译

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与UL635H256SC55相关器件

型号 品牌 获取价格 描述 数据表
UL635H256SC55G1 SIMTEK

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 		Non-Volatile SRAM, 32KX8, 55ns, CMOS, PDSO28, 0.330 INCH, SOP1-28
UL635H256SK35 SIMTEK

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 		Low Voltage PowerStore 32K x 8 nvSRAM
UL635H256SK35G1 SIMTEK

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 		Low Voltage PowerStore 32K x 8 nvSRAM
UL635H256SK45 SIMTEK

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 		Low Voltage PowerStore 32K x 8 nvSRAM
UL635H256SK45G1 SIMTEK

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 		Low Voltage PowerStore 32K x 8 nvSRAM
UL635H256SK55 ETC

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 		NVRAM (EEPROM Based)
UL635H256SK55G1 SIMTEK

获取价格

 		Non-Volatile SRAM, 32KX8, 55ns, CMOS, PDSO28, 0.330 INCH, SOP1-28
UL635H256TC45G1 CYPRESS

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 		Non-Volatile SRAM, 32KX8, 45ns, CMOS, PDSO32, TSOP1-32
UL635H256TC55 CYPRESS

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 		Non-Volatile SRAM, 32KX8, 55ns, CMOS, PDSO32, TSOP1-32
UL635H256TC55G1 CYPRESS

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 		Non-Volatile SRAM, 32KX8, 55ns, CMOS, PDSO32, TSOP1-32

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