Datasheet > UGE10DCT

UGE10DCT

更新时间： 2024-09-16 01:11:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	89K
描述
Glass passivated pellet chip junction

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UGE10DCT 数据手册

UGE10BCT, UGE10CCT, UGE10DCT

www.vishay.com

Vishay General Semiconductor

Dual Common Cathode Ultrafast Rectifier

FEATURES

TO-220AB

• Power pack

• Glass passivated pellet chip junction

• Ultrafast recovery times

• Soft recovery characteristics

• Low switching losses, high efficiency

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

UGE10xCT

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PIN 1

PIN 3

PIN 2

CASE

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of switching

power supplies, freewheeling diodes, DC/DC converters

and polarity protection application.

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 5.0 A

MECHANICAL DATA

V_RRM

I_FSM

100 V, 150 V, 200 V

55 A

Case: TO-220AB

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

t_rr

25 ns

V_F

0.895 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

T_Jmax.

Package

Diode variations

150 °C

TO-220AB

Common cathode

Polarity: As marked

Mounting Torque: 10 in-lbs max.

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL UGE10BCT

UGE10CCT

UGE10DCT

200

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

V_RRM

V_RWM

V_DC

100

150

200

Maximum DC blocking voltage

200

total device

Maximum average forward rectified current at T_C= 100 °C

per diode

I_F(AV)

5.0

Peak forward surge current 8.3 ms single half sine-wave

I_FSM

I_RSM

superimposed on rated load per diode

Non-repetitive peak reverse current per diode at t_p= 100 μs

0.2

Electrostatic discharge capacitor voltage,

human body model: C = 250 pF, R = 1.5 k

V_C

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

Revision: 23-Feb-16

Document Number: 87917

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与UGE10DCT相关器件

型号	品牌	获取价格	描述	数据表
UGE1112AY4	IXYS	获取价格	High Voltage Rectifiers
UGE1112AY4	LITTELFUSE	获取价格	高压整流器系列提供从3200V到24000V的击穿电压，而且提高了温度和功率循环。
UGE18ACT	VISHAY	获取价格	Glass passivated pellet chip junction
UGE18BCT	VISHAY	获取价格	Glass passivated pellet chip junction
UGE18CCT	VISHAY	获取价格	Glass passivated pellet chip junction
UGE18DCT	VISHAY	获取价格	Glass passivated pellet chip junction
UGE2.5	MICROSEMI	获取价格	6.6A, 2500V, SILICON, RECTIFIER DIODE, MODULE-2
UGE-2.5	MICROSEMI	获取价格	6.6A, 2500V, SILICON, RECTIFIER DIODE, MODULE-2
UGE3126AY4	IXYS	获取价格	High Voltage Rectifiers
UGE3126AY4	LITTELFUSE	获取价格	高压整流器系列提供从3200V到24000V的击穿电压，而且提高了温度和功率循环。