5秒后页面跳转
UGE5HT-E3/45 PDF预览

UGE5HT-E3/45

更新时间: 2024-11-05 15:55:59
品牌 Logo 应用领域
威世 - VISHAY 局域网功效二极管
页数 文件大小 规格书
4页 90K
描述
Rectifier Diode, 1 Phase, 1 Element, 5A, 500V V(RRM), Silicon, TO-220AC,

UGE5HT-E3/45 技术参数

生命周期:Obsolete包装说明:R-PSFM-T2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
其他特性:FREE WHEELING DIODE应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.75 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2最大非重复峰值正向电流:65 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:500 V
最大反向电流:30 µA最大反向恢复时间:0.05 µs
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

UGE5HT-E3/45 数据手册

 浏览型号UGE5HT-E3/45的Datasheet PDF文件第2页浏览型号UGE5HT-E3/45的Datasheet PDF文件第3页浏览型号UGE5HT-E3/45的Datasheet PDF文件第4页 
UGE5HT, UGE5JT  
Vishay General Semiconductor  
www.vishay.com  
High Voltage Ultrafast Rectifier  
FEATURES  
• Power pack  
TO-220AC  
• Glass passivated pellet chip junction  
• Ultrafast recovery time  
• Soft recovery characteristics  
• Low switching losses, high efficiency  
• High forward surge capability  
• Solder dip 275 °C max., 10 s per JESD 22-B106  
2
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
1
UGE5HT, UGE5JT  
PIN 1  
TYPICAL APPLICATIONS  
CASE  
PIN 2  
For use in high voltage and high frequency power factor  
corrector, freewheeling diodes, and secondary DC/DC  
rectification application.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
5.0 A  
Case: TO-220AC  
VRRM  
IFSM  
500 V, 600 V  
65 A  
Molding compound meets UL 94V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
trr  
25 ns  
VF at IF  
1.5 V  
TJ max.  
Package  
Diode variation  
150 °C  
Polarity: as marked  
TO-220AC  
Single die  
Mounting Torque: 10 in-lbs max.  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
UGE5HT  
500  
UGE5JT  
600  
UNIT  
Max. repetitive peak reverse voltage  
Max. working reverse voltage  
Max. RMS voltage  
VRRM  
VRWM  
VRMS  
VDC  
V
V
V
V
A
400  
480  
350  
420  
Max. DC blocking voltage  
Max. average forward rectified current  
500  
600  
IF(AV)  
5.0  
65  
Peak forward surge current 8.3 ms single half sine-wave superimposed  
on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
Revision: 23-Feb-16  
Document Number: 87721  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与UGE5HT-E3/45相关器件

型号 品牌 获取价格 描述 数据表
UGE5JT VISHAY

获取价格

Ultrafast recovery time
UGE5JT-E3/45 VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, TO-220AC,
UGE7.5 MICROSEMI

获取价格

3.3A, 7500V, SILICON, RECTIFIER DIODE, MODULE-2
UGE-7.5 MICROSEMI

获取价格

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3.3A, 7500V V(RRM), Silicon, MODULE-2
UGF0DCT VISHAY

获取价格

DIODE 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC, ITO-220AB, 3 PIN, Rectifier
UGF10 VISHAY

获取价格

Dual Ultrafast Soft Recovery Rectifiers
UGF1004G THINKISEMI

获取价格

10.0 Amperes Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers
UGF1004GA THINKISEMI

获取价格

10.0 Amperes Insulated Package Dual Common Anode Ultra Fast Recovery Rectifiers
UGF1004GA TSC

获取价格

Isolated Ultra Fast Rectifiers
UGF1004GD THINKISEMI

获取价格

10.0 Amperes Insulated Package Dual Doubler Polarity Ultra Fast Recovery Rectifiers