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UCC5640 PDF预览

UCC5640

更新时间: 2024-09-19 22:49:27
品牌 Logo 应用领域
德州仪器 - TI /
页数 文件大小 规格书
10页 170K
描述
Low Voltage Differential LVD SCSI 9 Line Terminator

UCC5640 数据手册

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SLUS314C – JANUARY 2000 – REVISED JUNE 2003  
FEATURES  
DESCRIPTION  
D
First LVD only Active Terminator  
The UCC5640 is an active terminator for low voltage  
differential (LVD) SCSI networks. This LVD only design  
allows the user to reach peak bus performance while  
reducing system cost. The device is designed as an  
active Y-terminator to improve the frequency response  
of the LVD bus. Designed with a 1.5-pF channel  
capacitance, the UCC5640 allows for minimal bus  
loading for a maximum number of peripherals. With the  
UCC5640, the designer will be able to comply with the  
Fast-40 SPI-2, Fast-80 SPI-3 and Fast-160 SPI-4  
specifications. The UCC5640 also provides a much  
needed system migration path for ever improving SCSI  
system standards. This device is available in the 24-pin  
TSSOP and 28-pin TSSOP for ease of layout use.  
D
Meets SCSI SPI-2 Ultra2 (Fast-40), SPI-3 Ultra3  
/ Ultra160 (Fast-80) and SPI-4 (Fast-160)  
Ultra320 Standards  
D
D
2.7-V to 5.25-V Operation  
Differential Failsafe Bias  
The UCC5640 is not designed for use in single ended  
(SE) or high voltage differential (HVD) systems.  
BLOCK DIAGRAM  
OPEN CIRCUIT ON POWER OFF  
OR OPEN CIRCUIT IN A  
SOURCE 5– 15mA  
TRMPWR 28  
2.7V to 5.25V  
µ
SINK 200 A MAXIMUM (NOISE LOAD)  
DISABLED TERMINATOR MODE  
REF 1.3V  
12 DIFSENS  
+
1.3V 0.1V  
HIGH POWER  
DIFFERENTIAL  
2.4V > 1.9V  
11  
27 LVD*  
DIFFB  
HIGH IMPEDANCE RECEIVER  
EVEN WITH POWER OFF  
0.7V > 0.5V  
SINGLE  
ENDED  
SOURCE/SINK REGULATOR  
REF 1.25V  
124  
124  
56mV  
52  
52  
+
L1–  
L1+  
4
3
56mV  
+
µ
10  
A
56mV  
52  
52  
+
26 L9–  
25 L9+  
DISCNCT 15  
56mV  
+
UDG–98181  
14  
GND  
1
REG  
*28 pin package only  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
ꢊꢥ  
Copyright 2003, Texas Instruments Incorporated  
ꢡ ꢥ ꢢ ꢡꢚ ꢛꢯ ꢝꢜ ꢠ ꢨꢨ ꢦꢠ ꢞ ꢠ ꢟ ꢥ ꢡ ꢥ ꢞ ꢢ ꢪ  
ꢢꢚ  
ꢣꢥ  
ꢠꢞ  
1
www.ti.com  

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