Datasheet > TYN20-800T

TYN20-800T

更新时间： 2024-09-19 15:55:47

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
11页	157K
描述
SCR

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中文翻译

获取价格

技术参数
数据手册

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TYN20-800T 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.63	Is Samacsys：	N
JESD-609代码：	e3	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	TIN	处于峰值回流温度下的最长时间：	NOT SPECIFIED
触发设备类型：	SCR	Base Number Matches：	1

TYN20-800T 数据手册

TYN20-800T

SCR

23 July 2012

Product data sheet

1. Product profile

1.1 General description

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic

package intended for use in applications requiring very high inrush current capability,

high thermal cycling performance and high junction temperature capability (T_j(max)= 150

°C).

1.2 Features and benefits

High bidirectional blocking voltage capability

High junction operating temperature capability

High thermal cycling performance

Planar passivated for voltage ruggedness and reliability

Very high current surge capability

•

1.3 Applications

Capacitive Discharge Ignition (CDI)

•

Crowbar protection

Inrush protection

Motor control

Voltage regulation

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DRM

V_RRM

I_TSM

repetitive peak off-

state voltage

800

repetitive peak reverse

voltage

800

210

non-repetitive peak on- half sine wave; T_j(init)= 25 °C;

state current

t_p= 10 ms; Fig. 4; Fig. 5

half sine wave; T_j(init)= 25 °C;

t_p= 8.3 ms

231

T_j

junction temperature

RMS on-state current

150

°C

I_T(RMS)

half sine wave; T_mb≤ 129 °C; Fig. 1;

Fig. 2

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中文翻译

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