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TYN20Y-600T PDF预览

TYN20Y-600T

更新时间: 2024-04-09 18:59:15
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
12页 498K
描述
Planar passivated Silicon Controlled Rectifier (SCR) in IITO220 internally insulated plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C).

TYN20Y-600T 数据手册

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TYN20Y-600T  
SCR  
Rev.02 - 26 May 2023  
Product data sheet  
1. General description  
Planar passivated Silicon Controlled Rectifier (SCR) in IITO220 internally insulated plastic package  
intended for use in applications requiring very high inrush current capability, high thermal cycling  
performance and high junction temperature capability (Tj(max) = 150 °C).  
2. Features and benefits  
High junction operating temperature capability (Tj(max) = 150 °C)  
High bidirectional blocking voltage capability  
Very high current surge capability  
High thermal cycling performance  
Planar passivated for voltage ruggedness and reliability  
Internally insulated package  
Isolated mounting base with 2500 V (RMS) isolation  
3. Applications  
Protection circuit in Power Supplies for Consumer / Industrial / Medical Equipment  
Capacitive Discharge Ignition (CDI)  
Crowbar protection  
Inrush protection  
Motor control  
Voltage regulation  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Values  
Unit  
Absolute maximum rating  
VDRM  
IT(RMS)  
ITSM  
repetitive peak off-state  
voltage  
600  
20  
V
A
A
RMS on-state current  
half sine wave; Tmb ≤ 116 °C;  
Fig. 1; Fig. 2; Fig. 3  
non-repetitive peak on-  
state current  
half sine wave; Tj(init) = 25 °C; tp = 10 ms;  
Fig. 4; Fig. 5  
230  
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms  
253  
150  
A
Tj  
junction temperature  
°C  

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