Datasheet > TYN20X-800T

TYN20X-800T

更新时间： 2024-02-13 22:26:13

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	172K
描述
SCR

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技术参数
数据手册

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TYN20X-800T 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.71	JESD-609代码：	e3
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	TIN
处于峰值回流温度下的最长时间：	NOT SPECIFIED	触发设备类型：	SCR
Base Number Matches：	1

TYN20X-800T 数据手册

TYN20X-800T

SCR

23 July 2012

Product data sheet

1. Product profile

1.1 General description

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full

pack" plastic package intended for use in applications requiring very high inrush current

capability, high thermal cycling performance and high junction temperature capability

(T_j(max)= 150 °C).

1.2 Features and benefits

High bidirectional blocking voltage capability

High junction operating temperature capability

High thermal cycling performance

Isolated package

Planar passivated for voltage ruggedness and reliability

Very high current surge capability

•

1.3 Applications

Capacitive Discharge Ignition (CDI)

•

Crowbar protection

Inrush protection

Motor control

Voltage regulation

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DRM

V_RRM

I_TSM

repetitive peak off-

state voltage

800

repetitive peak reverse

voltage

800

210

non-repetitive peak on- half sine wave; T_j(init)= 25 °C;

state current

t_p= 10 ms; Fig. 4; Fig. 5

half sine wave; T_j(init)= 25 °C;

t_p= 8.3 ms

231

T_j

junction temperature

RMS on-state current

150

°C

I_T(RMS)

half sine wave; T_h≤ 75 °C; Fig. 1; Fig. 2

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