5秒后页面跳转
TSF2080C PDF预览

TSF2080C

更新时间: 2024-09-24 12:49:23
品牌 Logo 应用领域
TSC 高压
页数 文件大小 规格书
3页 186K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

TSF2080C 数据手册

 浏览型号TSF2080C的Datasheet PDF文件第2页浏览型号TSF2080C的Datasheet PDF文件第3页 
creat by ART  
TSF2080C  
Taiwan Semiconductor  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
FEATURES  
- Patented Trench MOS Barrier Schottky technology  
- Excellent high temperature stability  
- Low forward voltage  
- Lower power loss/ High efficiency  
- High forward surge capability  
- Compliant to RoHS directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
ITO-220AB  
MECHANICAL DATA  
Case: ITO-220AB  
Molding compound meets UL 94 V-0 flammability rating  
Terminal: Matte tin plated leads, solderable per  
JESD 22-B102  
Polarity: As marked  
Mounting torque: 5 in-lbs. max.  
Weight: 1.7 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)  
PARAMETER  
TSF2080C  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
80  
20  
10  
V
per device  
per diode  
Maximum average forward rectified  
current  
IF(AV)  
A
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
100  
Peak repetitive reverse surge current (Note 1)  
Non-repetitive avalanche energy at L=60mH, per diode  
Voltage rate of change (Rated VR)  
IRRM  
EAS  
0.5  
A
mJ  
V/μs  
V
110  
10000  
dV/dt  
VAC  
Isolation voltage from terminal to heatsink t = 1 min  
1500  
MIN.  
TYP.  
MAX.  
-
Breakdown voltage ( IR =1.0mA )  
IF = 5A  
VBR  
VF  
80  
-
-
V
V
0.52  
-
TJ = 25°C  
IF = 10A  
IF = 5A  
-
0.67  
0.77  
-
Instantaneous forward voltage  
per diode ( Note2 )  
-
0.48  
TJ = 125°C  
VF  
IR  
IF = 10A  
-
0.62  
0.70  
600  
20  
TJ = 25°C  
-
20  
μA  
mA  
OC/W  
OC  
Instantaneous reverse current per diode at rated  
reverse voltage  
TJ = 125°C  
-
10  
Typical thermal resistance (Note 3)  
Operating junction temperature range  
Storage temperature range  
RθJC  
TJ  
5
- 55 to + 150  
- 55 to + 150  
OC  
TSTG  
Note 1: 2.0μs Pulse width, f=1.0KHz  
Note 2: Pulse test with pulse width=300μs, 1% duty cycle  
Note 3: Mount on heatsink size of 4in x 6in x 0.25in Al-plate  
Document Number: DS_D1309047  
Version:B13  

与TSF2080C相关器件

型号 品牌 获取价格 描述 数据表
TSF20H100C TSC

获取价格

Trench MOS Barrier Schottky Rectifier
TSF20H100C_14 TSC

获取价格

Trench Schottky Rectifier
TSF20H100C-S TSC

获取价格

Trench Schottky Rectifier
TSF20H120C TSC

获取价格

Trench MOS Barrier Schottky Rectifier
TSF20H120C-S TSC

获取价格

Trench Schottky Rectifier
TSF20H150C TSC

获取价格

Trench MOS Barrier Schottky Rectifier
TSF20H150C-S TSC

获取价格

Trench Schottky Rectifier
TSF20H200C TSC

获取价格

Trench Schottky Rectifier
TSF20L100C TSC

获取价格

Trench Schottky Rectifier
TSF20L120C TSC

获取价格

Trench Schottky Rectifier