TSF20H100C thru TSF20H150C
Taiwan Semiconductor
Trench MOS Barrier Schottky Rectifier
FEATURES
- Patented Trench MOS Barrier Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Lower power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
ITO-220AB
MECHANICAL DATA
Case : ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Terminal:Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity : As marked
Mounting torque : 5 in-lbs. max.
Weight:1.7 gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
PARAMETER
TSF20H100C TSF20H120C TSF20H150C
SYMBOL
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
120
20
150
V
per device
per diode
Maximum average forward rectified
current
IF(AV)
A
10
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
dV/dt
VAC
110
10000
1500
120
A
V/μs
V
Voltage rate of change (Rated VR)
Isolation voltage from terminal to heatsink t = 1 min
Breakdown voltage ( IR =1.0mA, Ta =25°C )
VBR
100
150
V
Typ.
0.64
0.74
0.55
0.63
-
Max.
-
Typ.
Max
-
Typ.
0.73
0.81
0.59
0.67
-
Max.
-
IF = 5A
0.68
0.78
0.56
0.63
-
TJ = 25°C
VF
VF
IR
IF = 10A
IF = 5A
0.81
-
0.87
-
1.10
-
Instantaneous forward voltage per diode
( Note1 )
V
TJ = 125°C
IF = 10A
0.70
200
10
0.69
250
15
0.73
150
10
TJ = 25°C
μA
Instantaneous reverse current per diode at rated
reverse voltage
TJ = 125°C
1.5
5
3
mA
OC/W
OC
OC
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
RθjC
TJ
2.5
4.9
3.8
- 55 to + 150
- 55 to + 150
TSTG
Note 1: Pulse Test with Pulse Width=300us, 1% Duty Cycle
Version:D14
Document Number:DS_DS_D1401006