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TSF20H150C PDF预览

TSF20H150C

更新时间: 2024-11-12 12:19:11
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TSC /
页数 文件大小 规格书
3页 212K
描述
Trench MOS Barrier Schottky Rectifier

TSF20H150C 数据手册

 浏览型号TSF20H150C的Datasheet PDF文件第2页浏览型号TSF20H150C的Datasheet PDF文件第3页 
TSF20H100C thru TSF20H150C  
Taiwan Semiconductor  
Trench MOS Barrier Schottky Rectifier  
FEATURES  
- Patented Trench MOS Barrier Schottky technology  
- Excellent high temperature stability  
- Low forward voltage  
- Lower power loss/ High efficiency  
- High forward surge capability  
- Compliant to RoHS directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
ITO-220AB  
MECHANICAL DATA  
Case : ITO-220AB  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant  
TerminalMatte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test  
Polarity : As marked  
Mounting torque : 5 in-lbs. max.  
Weight1.7 gram (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)  
PARAMETER  
TSF20H100C TSF20H120C TSF20H150C  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
100  
120  
20  
150  
V
per device  
per diode  
Maximum average forward rectified  
current  
IF(AV)  
A
10  
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
dV/dt  
VAC  
110  
10000  
1500  
120  
A
V/μs  
V
Voltage rate of change (Rated VR)  
Isolation voltage from terminal to heatsink t = 1 min  
Breakdown voltage ( IR =1.0mA, Ta =25°C )  
VBR  
100  
150  
V
Typ.  
0.64  
0.74  
0.55  
0.63  
-
Max.  
-
Typ.  
Max  
-
Typ.  
0.73  
0.81  
0.59  
0.67  
-
Max.  
-
IF = 5A  
0.68  
0.78  
0.56  
0.63  
-
TJ = 25°C  
VF  
VF  
IR  
IF = 10A  
IF = 5A  
0.81  
-
0.87  
-
1.10  
-
Instantaneous forward voltage per diode  
( Note1 )  
V
TJ = 125°C  
IF = 10A  
0.70  
200  
10  
0.69  
250  
15  
0.73  
150  
10  
TJ = 25°C  
μA  
Instantaneous reverse current per diode at rated  
reverse voltage  
TJ = 125°C  
1.5  
5
3
mA  
OC/W  
OC  
OC  
Typical thermal resistance per diode  
Operating junction temperature range  
Storage temperature range  
RθjC  
TJ  
2.5  
4.9  
3.8  
- 55 to + 150  
- 55 to + 150  
TSTG  
Note 1: Pulse Test with Pulse Width=300us, 1% Duty Cycle  
Version:D14  
Document NumberDS_DS_D1401006  

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