creat by ART
TSF20L45C thru TSF20L60C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
ITO-220AB
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
TSF20L45C
TSF20L60C
SYMBOL
UNIT
Maximum repetitive peak reverse voltage
VRRM
45
60
V
per device
per diode
20
10
Maximum average forward rectified
current
IF(AV)
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
120
A
Voltage rate of change (rated VR)
10000
dV/dt
V/μs
TYP
MAX
0.65
0.79
0.63
0.77
TYP
MAX
0.66
0.81
0.64
0.79
IF = 10A
0.55
0.70
0.53
0.68
0.57
0.72
0.55
0.70
TJ = 25°C
IF = 20A
IF = 10A
IF = 20A
Instantaneous forward voltage per diode
(Note1)
VF
V
TJ = 125°C
TJ = 25°C
500
100
4
μA
mA
°C/W
°C
Maximum instantaneous reverse current per diode at
rated reverse voltage
IR
TJ = 125°C
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
RθJC
TJ
- 55 to +150
- 55 to +150
TSTG
°C
Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
Version: B14
Document Number: DS_D1412005