Datasheet > TSF20U45C

TSF20U45C

更新时间： 2024-11-12 12:19:11

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
3页	241K
描述
Trench MOS Barrier Schottky Rectifier

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中文翻译

获取价格

数据手册

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TSF20U45C 数据手册

creat by ART

TSF20U45C thru TSF20U60C

Taiwan Semiconductor

Trench MOS Barrier Schottky Rectifier

FEATURES

- Patented Trench MOS Barrier Schottky technology

- Excellent high temperature stability

- Low forward voltage

- Lower power loss/ High efficiency

- High forward surge capability

- Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

MECHANICAL DATA

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Polarity: As marked

Mounting torque: 5 in-lbs. max.

Weight: 1.7g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25^oC unless otherwise noted)

PARAMETER

TSF20U45C

TSF20U60C

SYMBOL

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified

current

I_F(AV)

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

180

0.5

200

Peak repetitive reverse surge current (Note 1)

Voltage rate of change (Rated VR)

I_RRM

10000

dV/dt

V/μs

Isolation voltage from terminal to heatsink

t = 1 min

V_AC

V_BR

V_F

1500

2000

Breakdown voltage ( IR =1.0mA, Ta =25°C )

IF = 10A

0.51

0.65

0.47

0.50

0.60

0.47

0.60

T_J= 25°C

IF = 20A

IF = 10A

IF = 20A

Maximum instantaneous forward voltage

per diode ( Note2 )

T_J= 125°C

V_F

T_J= 25°C

500

100

μA

Maximum instantaneous reverse current per diode at

rated reverse voltage

I_R

T_J= 125°C

^OC/W

^OC

R_θjC

Typical thermal resistance per diode

Operating junction temperature range

Storage temperature range

T_J

- 55 to +150

T_STG

Note 1: 2.0 μs Pulse Width, f=1.0 kHz

Note 2: Pulse Test with Pulse Width=300 μs, 1% Duty Cycle

Document Number: DS_D1401024

Version: C14

12 3

中文翻译

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