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TSF20U45C PDF预览

TSF20U45C

更新时间: 2024-11-12 12:19:11
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TSC /
页数 文件大小 规格书
3页 241K
描述
Trench MOS Barrier Schottky Rectifier

TSF20U45C 数据手册

 浏览型号TSF20U45C的Datasheet PDF文件第2页浏览型号TSF20U45C的Datasheet PDF文件第3页 
creat by ART  
TSF20U45C thru TSF20U60C  
Taiwan Semiconductor  
Trench MOS Barrier Schottky Rectifier  
FEATURES  
- Patented Trench MOS Barrier Schottky technology  
- Excellent high temperature stability  
- Low forward voltage  
- Lower power loss/ High efficiency  
- High forward surge capability  
- Compliant to RoHS directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21 definition  
MECHANICAL DATA  
Case: ITO-220AB  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test  
Polarity: As marked  
Mounting torque: 5 in-lbs. max.  
Weight: 1.7g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)  
PARAMETER  
TSF20U45C  
TSF20U60C  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
45  
60  
V
per device  
per diode  
20  
10  
Maximum average forward rectified  
current  
IF(AV)  
A
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
180  
0.5  
200  
3
Peak repetitive reverse surge current (Note 1)  
Voltage rate of change (Rated VR)  
IRRM  
A
10000  
dV/dt  
V/μs  
Isolation voltage from terminal to heatsink  
t = 1 min  
VAC  
VBR  
VF  
1500  
2000  
V
V
Breakdown voltage ( IR =1.0mA, Ta =25°C )  
IF = 10A  
45  
60  
0.51  
0.65  
0.47  
-
0.50  
0.60  
0.47  
0.60  
TJ = 25°C  
IF = 20A  
IF = 10A  
IF = 20A  
Maximum instantaneous forward voltage  
per diode ( Note2 )  
V
TJ = 125°C  
VF  
TJ = 25°C  
500  
100  
μA  
Maximum instantaneous reverse current per diode at  
rated reverse voltage  
IR  
TJ = 125°C  
mA  
OC/W  
OC  
OC  
RθjC  
Typical thermal resistance per diode  
Operating junction temperature range  
Storage temperature range  
3
4
TJ  
- 55 to +150  
- 55 to +150  
TSTG  
Note 1: 2.0 μs Pulse Width, f=1.0 kHz  
Note 2: Pulse Test with Pulse Width=300 μs, 1% Duty Cycle  
Document Number: DS_D1401024  
Version: C14  

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