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TSF20L120C PDF预览

TSF20L120C

更新时间: 2024-11-13 01:08:23
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TSC /
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5页 248K
描述
Trench Schottky Rectifier

TSF20L120C 数据手册

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TSF20L100C thru TSF20L200C  
Taiwan Semiconductor  
Trench Schottky Rectifier  
FEATURES  
- Patented Trench Schottky technology  
- Excellent high temperature stability  
- Low forward voltage  
- Low power loss/ high efficiency  
- High forward surge capability  
- Compliant to RoHS directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
ITO-220AB  
- Halogen-free according to IEC 61249-2-21 definition  
TYPICAL APPLICATIONS  
Trench Schottky barrier rectifier are designed for high frequency  
miniature switched mode power supplies such as adapters,  
lighting and on-board DC/DC converters.  
MECHANICAL DATA  
Case: ITO-220AB  
Molding compound meets UL 94 V-0 flammability rating  
Packing code with suffix "G" means green compound (halogen-free)  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 2 whisker test  
Polarity: As marked  
Mounting torque: 0.56 Nm max.  
Weight: 1.7 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)  
TSF20L  
100C  
100  
TSF20L  
120C  
120  
TSF20L  
150C  
150  
TSF20L  
200C  
200  
PARAMETER  
SYMBOL  
VRRM  
UNIT  
Maximum repetitive peak reverse voltage  
V
A
per device  
per diode  
20  
10  
Maximum average forward  
rectified current  
IF(AV)  
Peak forward surge current, 8.3ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
100  
A
Voltage rate of change (Rated VR)  
10000  
dV/dt  
V/μs  
TYP MAX TYP MAX TYP MAX TYP MAX  
IF = 5A  
0.62  
-
-
0.86  
-
0.68  
-
-
0.92  
-
0.78  
-
-
0.95  
-
0.81  
-
-
0.98  
-
TJ = 25°C  
VF  
IF = 10A  
IF = 5A  
V
Instantaneous forward  
voltage per diode (Note1)  
0.55  
0.58  
0.64  
0.67  
TJ = 125°C  
IF = 10A  
0.64 0.72 0.67 0.76 0.71 0.80 0.74 0.83  
TJ = 25°C  
-
-
100  
15  
-
-
100  
15  
-
100  
10  
-
100  
10  
μA  
mA  
°C/W  
°C  
Instantaneous reverse current per  
diode at rated reverse voltage  
IR  
TJ = 125°C  
1.5  
1.5  
Typical thermal resistance per diode  
Operating junction temperature range  
Storage temperature range  
RθJC  
TJ  
4
- 55 to +150  
- 55 to +150  
TSTG  
°C  
Note 1: Pulse test with pulse width=300μs, 1% duty cycle  
Document Number: DS_1411073  
Version: B14  

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