TSF20L100C thru TSF20L200C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
ITO-220AB
- Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
TSF20L
100C
100
TSF20L
120C
120
TSF20L
150C
150
TSF20L
200C
200
PARAMETER
SYMBOL
VRRM
UNIT
Maximum repetitive peak reverse voltage
V
A
per device
per diode
20
10
Maximum average forward
rectified current
IF(AV)
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load per diode
IFSM
100
A
Voltage rate of change (Rated VR)
10000
dV/dt
V/μs
TYP MAX TYP MAX TYP MAX TYP MAX
IF = 5A
0.62
-
-
0.86
-
0.68
-
-
0.92
-
0.78
-
-
0.95
-
0.81
-
-
0.98
-
TJ = 25°C
VF
IF = 10A
IF = 5A
V
Instantaneous forward
voltage per diode (Note1)
0.55
0.58
0.64
0.67
TJ = 125°C
IF = 10A
0.64 0.72 0.67 0.76 0.71 0.80 0.74 0.83
TJ = 25°C
-
-
100
15
-
-
100
15
-
100
10
-
100
10
μA
mA
°C/W
°C
Instantaneous reverse current per
diode at rated reverse voltage
IR
TJ = 125°C
1.5
1.5
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
RθJC
TJ
4
- 55 to +150
- 55 to +150
TSTG
°C
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
Document Number: DS_1411073
Version: B14