Datasheet > TSF20H100C_14

TSF20H100C_14

更新时间： 2024-11-13 01:19:39

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	223K
描述
Trench Schottky Rectifier

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中文翻译

获取价格

数据手册

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TSF20H100C_14 数据手册

TSF20H100C thru TSF20H200C

Taiwan Semiconductor

Trench Schottky Rectifier

FEATURES

- Patented Trench Schottky technology

- Excellent high temperature stability

- Low forward voltage

- Lower power loss/ high efficiency

- High forward surge capability

- Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

ITO-220AB

TYPICAL APPLICATIONS

Trench Schottky barrier rectifier are designed for high frequency

miniature switched mode power supplies such as adapters, lighting and

on-board DC/DC converters.

MECHANICAL DATA

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

Packing code with suffix "G" means green compound (halogen-free)

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 2 whisker test

Polarity: As marked

Mounting torque: 0.56 Nm max.

Weight: 1.7 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

TSF20H

100C

100

TSF20H

120C

120

TSF20H

150C

150

TSF20H

200C

200

PARAMETER

SYMBOL

V_RRM

UNIT

Maximum repetitive peak reverse voltage

per device

per diode

Maximum average forward rectified

current

I_F(AV)

Peak forward surge current, 8.3 ms single half sine-wave superimposed

on rated load per diode

I_FSM

120

V/μs

Voltage rate of change (Rated V_R)

10000

1500

dV/dt

V_AC

Isolation voltage from terminal to heatsink t = 1 min

Typ. Max. Typ. Max Typ. Max. Typ. Max.

0.64 0.68 0.72 0.77

0.74 0.81 0.78 0.87 0.81 0.90 0.83 0.93

0.55 0.56 0.58 0.62

0.63 0.70 0.63 0.69 0.66 0.75 0.68 0.78

I_F= 5A

T_J= 25°C

V_F

I_R

I_F= 10A

Instantaneous forward voltage per diode

( Note1 )

I_F= 5A

T_J= 125°C

I_F= 10A

T_J= 25°C

200

250

100

μA

°C/W

°C

Instantaneous reverse current per diode at rated

reverse voltage

T_J= 125°C

1.5

Typical thermal resistance per diode

Operating junction temperature range

Storage temperature range

R_θJC

T_J

4.0

4.5

- 55 to +150

T_STG

°C

Note 1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle

Document Number: DS_D1411024

Version: I14

12 3 4 5

中文翻译

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