Datasheet > TSD882_11

TSD882_11

更新时间： 2024-11-18 08:34:15

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
4页	85K
描述
Low Vcesat NPN Transistor

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中文翻译

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数据手册

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TSD882_11 数据手册

TSD882

Low Vcesat NPN Transistor

TO-126

Pin Definition:

1. Emitter

2. Collector

3. Base

PRODUCT SUMMARY

BV_CBO

BV_CEO

I_C

50V

V_CE(SAT)

0.5V @ I_C/ I_B= 2A / 200mA

Features

Ordering Information

●

Low V_CE(SAT)0.25 @ I_C/ I_B= 2A / 200mA (Typ.)

Complementary part with TSB772

Part No.

TSD882CK B0

TSD882CK B0G

Package

TO-126

Packing

250pcs / Bulk

●

Structure

●

Epitaxial Planar Type

NPN Silicon Transistor

Note: “G” denote for Halogen Free Product

●

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

7 (note)

Collector Current

I_C

Pulse

Ta = 25^oC

Tc = 25^oC

Collector Power Dissipation

P_D

Operating Junction Temperature

T_J

+150

^oC

Operating Junction and Storage Temperature Range

T_STG

- 55 to +150

Note: Single pulse, Pw≤350us, Duty≤2%

Electrical Specifications (Ta = 25^oC unless otherwise noted)

Parameter

Conditions

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

I_C= 50uA, I_E= 0

Collector-Emitter Breakdown Voltage I_C= 1mA, I_B= 0

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= 50uA, I_C= 0

V_CB= 50V, I_E= 0

V_EB= 3V, I_C= 0

Emitter Cutoff Current

I_EBO

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Transfer Ratio

I_C/ I_B= 2A / 200mA

V_CE= 2V, I_C= 1A

V_CE=6V, I_C=50mA,

f=100MHz

*V_CE(SAT)

*V_BE(SAT)

*h_FE

0.25

0.5

100

500

Transition Frequency

f_T

MHz

Output Capacitance

V_CB= 10V, f=1MHz

Cob

* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%

1/4

Version: B11

12 3 4

中文翻译

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