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TSD882CK PDF预览

TSD882CK

更新时间: 2024-11-08 22:41:55
品牌 Logo 应用领域
TSC 晶体晶体管
页数 文件大小 规格书
3页 50K
描述
Low Vce(sat) NPN Transistor

TSD882CK 数据手册

 浏览型号TSD882CK的Datasheet PDF文件第2页浏览型号TSD882CK的Datasheet PDF文件第3页 
TSD882  
Low Vce(sat) NPN Transistor  
TO-126  
Pin assignment:  
TO-126  
1. Emitter  
2. Collector  
3. Base  
BVCEO = 50V  
Ic = 3A  
VCE (SAT), = 0.25V(typ.) @Ic / Ib = 2A / 0.2A  
Features  
Ordering Information  
Low VCE (SAT).  
Part No.  
Packing  
Package  
Excellent DC current gain characteristics  
TSD882CK  
Bulk Pack  
TO-126  
Structure  
Epitaxial planar type.  
Complementary to TSB772  
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
50V  
V
V
V
A
50V  
5
3
DC  
Pulse  
TO-126  
7 (note 1)  
1.0  
Collector Power Dissipation  
PD  
TJ  
W
oC  
oC  
Operating Junction Temperature  
+150  
Operating Junction and Storage Temperature Range  
Note: 1. Single pulse, Pw = 2mS  
TSTG  
- 55 to +150  
Electrical Characteristics  
Ta = 25 oC unless otherwise noted  
Parameter  
Static  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
Collector-Base Voltage  
IC = 50uA, IE = 0  
IC = 1mA, IB = 0  
BVCBO  
BVCEO  
BVEBO  
ICBO  
50  
50  
6
--  
--  
--  
--  
V
V
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
IE = 50uA, IC = 0  
VCB = 40V, IE = 0  
VEB = 4V, IC = 0  
--  
--  
V
--  
--  
1
uA  
uA  
V
Emitter Cutoff Current  
IEBO  
--  
--  
1
Collector-Emitter Saturation Voltage  
DC Current Transfer Ratio  
Transition Frequency  
IC / IB = 2.0A / 0.2A  
VCE = 2V, IC = 1A  
VCE = 5V, IC = 100mA,  
f = 100MHz  
VCE(SAT)  
hFE  
--  
0.25  
--  
0.5  
500  
--  
160  
--  
fT  
90  
MHz  
pF  
Output Capacitance  
VCB = 10V, f=1MHz  
Cob  
45  
--  
Note : pulse test: pulse width <=380uS, duty cycle <=2%  
TSD882  
1-1  
2003/12 rev. B  

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