TSD882
Low Vce(sat) NPN Transistor
TO-126
Pin assignment:
TO-126
1. Emitter
2. Collector
BVCEO = 50V
Ic = 3A
VCE (SAT), = 0.25V(typ.) @Ic / Ib = 2A / 0.2A
Features
Ordering Information
ꢀ
Low VCE (SAT).
Part No.
Packing
Package
ꢀ
Excellent DC current gain characteristics
TSD882CK
Bulk Pack
TO-126
Structure
ꢀ
Epitaxial planar type.
ꢀ
Complementary to TSB772
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
50V
V
V
V
A
50V
5
3
DC
Pulse
TO-126
7 (note 1)
1.0
Collector Power Dissipation
PD
TJ
W
oC
oC
Operating Junction Temperature
+150
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 2mS
TSTG
- 55 to +150
Electrical Characteristics
Ta = 25 oC unless otherwise noted
Parameter
Static
Conditions
Symbol
Min
Typ
Max
Unit
Collector-Base Voltage
IC = 50uA, IE = 0
IC = 1mA, IB = 0
BVCBO
BVCEO
BVEBO
ICBO
50
50
6
--
--
--
--
V
V
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IE = 50uA, IC = 0
VCB = 40V, IE = 0
VEB = 4V, IC = 0
--
--
V
--
--
1
uA
uA
V
Emitter Cutoff Current
IEBO
--
--
1
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
IC / IB = 2.0A / 0.2A
VCE = 2V, IC = 1A
VCE = 5V, IC = 100mA,
f = 100MHz
VCE(SAT)
hFE
--
0.25
--
0.5
500
--
160
--
fT
90
MHz
pF
Output Capacitance
VCB = 10V, f=1MHz
Cob
45
--
Note : pulse test: pulse width <=380uS, duty cycle <=2%
TSD882
1-1
2003/12 rev. B