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TSD882_1112 PDF预览

TSD882_1112

更新时间: 2022-09-17 15:21:55
品牌 Logo 应用领域
TSC 晶体晶体管
页数 文件大小 规格书
6页 617K
描述
Low Vcesat NPN Transistor

TSD882_1112 数据手册

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TSD882  
Low Vcesat NPN Transistor  
TO-126  
Pin Definition:  
1. Emitter  
2. Collector  
3. Base  
PRODUCT SUMMARY  
BVCBO  
BVCEO  
IC  
60V  
30V  
3A  
VCE(SAT)  
0.5V @ IC=2A, IB=200mA  
Features  
Ordering Information  
Low VCE(SAT) 0.3 @ IC=2A, IB=200mA (Typ.)  
Complementary part with TSB772  
Part No.  
TSD882CK B0  
TSD882CK B0G  
Package  
TO-126  
TO-126  
Packing  
200pcs / Bulk  
200pcs / Bulk  
Structure  
Note: “G” denote for Halogen Free Product  
Epitaxial Planar Type  
NPN Silicon Transistor  
Absolute Maximum Rating (TA=25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCEO  
VEBO  
60  
30  
V
6
V
DC  
3
7 (note)  
1
Collector Current  
IC  
A
Pulse  
TA=25oC  
TC=25oC  
Collector Power Dissipation  
PD  
W
10  
Operating Junction Temperature  
TJ  
+150  
oC  
oC  
Operating Junction and Storage Temperature Range  
TSTG  
- 55 to +150  
Note: Single pulse, Pw350us, Duty2%  
Electrical Specifications (TA=25oC unless otherwise noted)  
Parameter  
Conditions  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Min  
60  
30  
6
Typ  
--  
Max  
--  
Unit  
V
Collector-Base Breakdown Voltage  
IC =50uA, IE =0  
Collector-Emitter Breakdown Voltage IC = 1mA, IB =0  
--  
--  
V
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
IE =50uA, IC =0  
--  
--  
V
VCB =60V, IE =0  
VEB =6V, IC =0  
--  
--  
100  
100  
0.5  
1.5  
--  
nA  
nA  
V
Emitter Cutoff Current  
IEBO  
--  
--  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
IC=2A, IB=200mA  
IC=2A, IB=200mA  
VCE =2V, IC =20A  
VCE =2V, IC =500mA  
VCE =2V, IC =1A  
VCE =5V, IC=500mA,  
f=100MHz  
*VCE(SAT)  
*VBE(SAT)  
--  
0.3  
--  
--  
V
*hFE  
*hFE  
*hFE  
1
2
3
160  
180  
150  
--  
DC Current Transfer Ratio  
--  
390  
--  
--  
Transition Frequency  
Output Capacitance  
fT  
--  
--  
270  
16  
--  
--  
MHz  
pF  
VCB = 10V, f=1MHz  
Cob  
* Pulse Test: Pulse Width 300uS, Duty Cycle2%  
1/6  
Version: C11  

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