TSD882
Low Vcesat NPN Transistor
TO-126
Pin Definition:
1. Emitter
2. Collector
3. Base
PRODUCT SUMMARY
BVCBO
BVCEO
IC
60V
30V
3A
VCE(SAT)
0.5V @ IC=2A, IB=200mA
Features
Ordering Information
●
Low VCE(SAT) 0.3 @ IC=2A, IB=200mA (Typ.)
Complementary part with TSB772
Part No.
TSD882CK B0
TSD882CK B0G
Package
TO-126
TO-126
Packing
200pcs / Bulk
200pcs / Bulk
●
Structure
Note: “G” denote for Halogen Free Product
●
Epitaxial Planar Type
NPN Silicon Transistor
●
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
60
30
V
6
V
DC
3
7 (note)
1
Collector Current
IC
A
Pulse
TA=25oC
TC=25oC
Collector Power Dissipation
PD
W
10
Operating Junction Temperature
TJ
+150
oC
oC
Operating Junction and Storage Temperature Range
TSTG
- 55 to +150
Note: Single pulse, Pw≤350us, Duty≤2%
Electrical Specifications (TA=25oC unless otherwise noted)
Parameter
Conditions
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
60
30
6
Typ
--
Max
--
Unit
V
Collector-Base Breakdown Voltage
IC =50uA, IE =0
Collector-Emitter Breakdown Voltage IC = 1mA, IB =0
--
--
V
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IE =50uA, IC =0
--
--
V
VCB =60V, IE =0
VEB =6V, IC =0
--
--
100
100
0.5
1.5
--
nA
nA
V
Emitter Cutoff Current
IEBO
--
--
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC=2A, IB=200mA
IC=2A, IB=200mA
VCE =2V, IC =20A
VCE =2V, IC =500mA
VCE =2V, IC =1A
VCE =5V, IC=500mA,
f=100MHz
*VCE(SAT)
*VBE(SAT)
--
0.3
--
--
V
*hFE
*hFE
*hFE
1
2
3
160
180
150
--
DC Current Transfer Ratio
--
390
--
--
Transition Frequency
Output Capacitance
fT
--
--
270
16
--
--
MHz
pF
VCB = 10V, f=1MHz
Cob
* Pulse Test: Pulse Width ≤300uS, Duty Cycle≤2%
1/6
Version: C11