Datasheet > TSD882

TSD882

更新时间： 2024-11-17 22:41:55

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
3页	50K
描述
Low Vce(sat) NPN Transistor

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中文翻译

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数据手册

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TSD882 数据手册

TSD882

Low Vce(sat) NPN Transistor

TO-126

Pin assignment:

TO-126

1. Emitter

2. Collector

3. Base

BV_CEO= 50V

Ic = 3A

V_{CE (SAT)}, = 0.25V(typ.) @Ic / Ib = 2A / 0.2A

Features

Ordering Information

ꢀ

Low V_{CE (SAT).}

Part No.

Packing

Package

ꢀ

Excellent DC current gain characteristics

TSD882CK

Bulk Pack

TO-126

Structure

ꢀ

Epitaxial planar type.

ꢀ

Complementary to TSB772

Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

50V

Pulse

TO-126

7 (note 1)

1.0

Collector Power Dissipation

P_D

T_J

^oC

Operating Junction Temperature

+150

Operating Junction and Storage Temperature Range

Note: 1. Single pulse, Pw = 2mS

T_STG

- 55 to +150

Electrical Characteristics

Ta = 25 ^oC unless otherwise noted

Parameter

Static

Conditions

Symbol

Min

Typ

Max

Unit

Collector-Base Voltage

I_C= 50uA, I_E= 0

I_C= 1mA, I_B= 0

BV_CBO

BV_CEO

BV_EBO

I_CBO

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= 50uA, I_C= 0

V_CB= 40V, I_E= 0

V_EB= 4V, I_C= 0

Emitter Cutoff Current

I_EBO

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

Transition Frequency

I_C/ I_B= 2.0A / 0.2A

V_CE= 2V, I_C= 1A

V_CE= 5V, I_C= 100mA,

f = 100MHz

V_CE(SAT)

h_FE

0.25

0.5

500

160

f_T

MHz

Output Capacitance

V_CB= 10V, f=1MHz

Cob

Note : pulse test: pulse width <=380uS, duty cycle <=2%

TSD882

1-1

2003/12 rev. B

12 3

中文翻译

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