Datasheet > TSD2444_1

TSD2444_1

更新时间： 2024-09-16 05:52:31

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
4页	338K
描述
Low Vcesat NPN Transistor

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中文翻译

获取价格

数据手册

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TSD2444_1 数据手册

TSD2444

Low Vcesat NPN Transistor

SOT-23

Pin Definition:

1. Base

PRODUCT SUMMARY

BV_CBO

BV_CEO

I_C

40V

2. Emitter

3. Collector

25V

800mA

V_CE(SAT)

40mV @ I_C/ I_B= 50 / 2.5mA

Features

Ordering Information

●

Low V_CE(SAT)

Excellent DC Current Gain Characteristics

Part No.

Package

SOT-23

Packing

●

TSD2444CX RF

3Kpcs / 7” Reel

Structure

●

Epitaxial Planar Type

Complementary to TSB1590CX

●

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Collector-Base Voltage

Symbol

Limit

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

800

^oC

Total Power Dissipation

Operating Junction Temperature

Operating Junction and Storage Temperature Range

P_tot

225

T_J

+150

- 55 to +150

T_STG

^oC

Electrical Specifications (Ta = 25^oC unless otherwise noted)

Parameter

Conditions

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

I_C= 100uA, I_E= 0

Collector-Emitter Breakdown Voltage I_C= 2mA, I_B= 0

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= 100uA, I_C= 0

V_CB= 30V, I_E= 0

0.5

0.06

0.3

0.6

1.0

560

Emitter Cutoff Current

V_EB= 6V, I_C= 0

I_EBO

I_C= 50mA, I_B= 2.5mA

I_C= 400mA, I_B= 20mA

I_C= 800mA, I_B= 80mA

V_CE= 1V, I_C= 10mA

V_CE= 1V, I_C= 100mA

V_CE= 1V, I_C= 600mA

V_CE= 5V, I_C=-100mA

V_CB= 10V, f=1MHz

*V_CE(SAT)

V_BE(ON)

0.04

0.15

0.25

Collector-Emitter Saturation Voltage

Base-Emitter on Voltage

DC Current Transfer Ratio

h_FE

f_T

180

Transition Frequency

Output Capacitance

150

MHz

Cob

* Pulse Test: Pulse width ≤380us, Duty cycle ≤ 2%

1/4

Version: A08

12 3 4

中文翻译

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