5秒后页面跳转
TSD2444CXP PDF预览

TSD2444CXP

更新时间: 2024-09-15 22:19:07
品牌 Logo 应用领域
TSC 晶体晶体管
页数 文件大小 规格书
3页 46K
描述
Low Vce(sat) NPN Transistor

TSD2444CXP 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

TSD2444CXP 数据手册

 浏览型号TSD2444CXP的Datasheet PDF文件第2页浏览型号TSD2444CXP的Datasheet PDF文件第3页 
TSD2444  
Low Vce(sat) NPN Transistor  
BVCEO = 20V  
Ic = 1A  
Pin assignment:  
1. Base  
VCE (SAT), = 0.2V(typ.) @Ic / Ib = 0.5A / 50mA  
2. Emitter  
3. Collector  
Features  
Ordering Information  
—
Low VCE (SAT).  
Part No.  
Packing  
Package  
—
Excellent DC current gain characteristics  
TSD2444CX  
Tape & Reel  
SOT-23  
Structure  
—
Epitaxial planar type.  
—
Complementary to TSB1590CX  
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
40V  
V
V
V
A
20V  
5
1
DC  
Pulse  
1.5 (note 1)  
0.225  
Collector Power Dissipation  
PD  
W
Operating Junction Temperature  
TJ  
+150  
oC  
oC  
Operating Junction and Storage Temperature Range  
Note: 1. Single pulse, Pw = 10mS  
TSTG  
- 55 to +150  
Electrical Characteristics  
Ta = 25 oC unless otherwise noted  
Parameter  
Static  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
Collector-Base Voltage  
IC = 10uA, IE = 0  
IC = 1mA, IB = 0  
BVCBO  
BVCEO  
BVEBO  
ICBO  
40  
20  
5
--  
--  
--  
--  
V
V
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
IE = 10uA, IC = 0  
--  
--  
V
VCB = 20V, IE = 0  
VEB = 4V, IC = 0  
--  
--  
0.5  
0.5  
0.4  
390  
--  
uA  
uA  
V
Emitter Cutoff Current  
IEBO  
--  
--  
Collector-Emitter Saturation Voltage  
DC Current Transfer Ratio  
Transition Frequency  
IC / IB = 500mA / 50mA  
VCE = 2V, IC = 0.1A  
VCE = 5V, IC = 50mA,  
f = 100MHz  
VCE(SAT)  
hFE  
--  
0.2  
--  
82  
--  
fT  
150  
MHz  
pF  
Output Capacitance  
VCB = 10V, f=1MHz  
Cob  
--  
15  
--  
Note : pulse test: pulse width <=380uS, duty cycle <=2%  
Classification Of hFE  
Rank  
P
Q
R
Range  
82 - 180  
120 - 270  
180 - 390  
TSD2444  
1-3  
2003/12 rev. A  

与TSD2444CXP相关器件

型号 品牌 获取价格 描述 数据表
TSD2444CXQ TSC

获取价格

Low Vce(sat) NPN Transistor
TSD2444CXR TSC

获取价格

Low Vce(sat) NPN Transistor
TSD2444CXRF TSC

获取价格

Low Vcesat NPN Transistor
TSD24C BL Galaxy Electrical

获取价格

24V,350W,Surface Mount TVS
TSD24CW BL Galaxy Electrical

获取价格

24V,350W,Surface Mount TVS
TSD250N05F ETC

获取价格

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 50V V(BR)DSS | 250A I(D)
TSD250N05V ETC

获取价格

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 50V V(BR)DSS | 250A I(D)
TSD-25A-05 TECHNOLOGY

获取价格

DC TO DC CONVERTERS
TSD-25A-12 TECHNOLOGY

获取价格

DC TO DC CONVERTERS
TSD-25A-24 TECHNOLOGY

获取价格

DC TO DC CONVERTERS