Datasheet > TSD2931-10

TSD2931-10

更新时间： 2024-09-15 22:19:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管射频
页数	文件大小	规格书
10页	95K
描述
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

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TSD2931-10 数据手册

SD2931-10

RF POWER TRANSISTORS

HF/VHF/UHF N-CHANNEL MOSFETs

ADVANCE DATA

GOLD METALLIZATION

EXCELLENT THERMAL STABILITY

COMMON SOURCE CONFIGURATION

POUT = 150W MIN. WITH 14 dB gain @175

MHz

THERMALLY ENHANCED PACKAGING FOR

LOWER JUNCTION TEMPERATURES

DESCRIPTION

M174

The SD2931-10 is a gold metallized N-Channel

MOS field-effect RF power transistor. Being

electrically identical to the standard SD2931

MOSFET, it is intended for use in 50V dc large

signal applicationsup to 230 MHz.

epoxy sealed

ORDER CODE

BRANDING

SD2931-10

TSD2931-10

The SD2931-10 is mechanical compatible to the

SD2931 but offers in addition a better thermal

capability (25 % lower thermal resistance),

representing the best-in-class transistors for ISM

applications.

PIN CONNECTION

1. Drain

3.Gate

2. Source

4. Source

ABSOLUTE MAXIMUM RATINGS (T_case= 25 ^oC)

Symbol

Parameter

Value

Unit

V_(BR)DSSDrain Source Voltage

125

V_DGR

V_GS

I_D

Drain-Gate Voltage (R_GS= 1MΩ)

Gate-Source Voltage

Drain Current

±20

P_DISS

T_j

Power Dissipation

389

^oC

Max. Operating Junction Temperature

Storage Temperature

200

T_STG

-65 to 150

THERMAL DATA

R_th(j-c)

R_th(c-s)

Junction-Case Thermal Resistance

Case-Heatsink Thermal Resistance

0.45

0.2

^oC/W

* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).

1/10

March 2000

12 3 4 5 6 7...10

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