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TSD30H120CW PDF预览

TSD30H120CW

更新时间: 2024-09-17 01:08:23
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描述
Trench Schottky Rectifier

TSD30H120CW 数据手册

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TSD30H100CW - TSD30H200CW  
Taiwan Semiconductor  
Trench Schottky Rectifier  
FEATURES  
- Patented Trench Schottky technology  
- Excellent high temperature stability  
- Low forward voltage  
2
- Low power loss/ High efficiency  
- High forward surge capability  
1
- Compliant to RoHS directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
3
TO-263AB (D2PAK)  
- Halogen-free according to IEC 61249-2-21 definition  
TYPICAL APPLICATIONS  
Trench Schottky barrier rectifier are designed for high frequency  
miniature switched mode power supplies such as adapters,  
lighting and on-board DC/DC converters.  
MECHANICAL DATA  
Case: TO-263AB (D2PAK)  
Molding compound meets UL 94 V-0 flammability rating  
Packing code with suffix "G" menas green compound (halogen-free)  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 1A whisker test  
Polarity: As marked  
Weight: 1.6 g (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)  
TSD30H  
100CW  
100  
TSD30H  
120CW  
120  
TSD30H  
150CW  
150  
TSD30H  
200CW  
200  
PARAMETER  
SYMBOL  
VRRM  
UNIT  
Maximum repetitive peak reverse voltage  
V
A
per device  
per diode  
30  
15  
Maximum average  
IF(AV)  
forward rectified current  
Peak forward surge current, 8.3 ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
200  
A
Voltage rate of change (Rated VR)  
10000  
dV/dt  
V/μs  
TYP  
MAX  
0.78  
0.68  
250  
35  
TYP  
MAX  
TYP  
MAX  
0.90  
0.77  
150  
20  
TYP  
MAX  
0.92  
0.79  
150  
20  
TJ = 25°C  
0.69  
0.61  
-
0.75  
0.64  
-
0.84  
0.73  
250  
35  
0.81  
0.68  
-
0.84  
0.70  
-
Instantaneous forward  
voltage per diode (Note1)  
IF = 15A  
VF  
IR  
V
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
μA  
mA  
°C/W  
°C  
Instantaneous reverse current per  
diode at rated reverse voltage  
10  
10  
3
3
Typical thermal resistance per diode  
Operating junction temperature range  
Storage temperature range  
RθJC  
TJ  
2.8  
- 55 to +150  
- 55 to +150  
TSTG  
°C  
Note 1: Pulse test with pulse width=300μs, 1% duty cycle  
Document Number: DS_D1411019  
Version: B15  

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